Study of proton-bombardment-induced radiation damage in elemental and compound semiconductors by RBS channeling

C. Ascheron, J. P. Biersack, D. Fink, P. Goppelt, A. Manuaba, F. Paszti, N. Q. Khanh

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

In selected AIIIBV, AIIBVI and elemental semiconductors, which were bombarded with 0.3 MeV protons, the radiation damage is studied with the RBS channeling technique and compared to the theoretically determined primary damage profiles. It has been observed that the various material groups exhibit a different sensitivity to radiation damage. The sensitivity within each group scales approximately with the primary defect production rates resulting from TRIM calculations. The experimental damage profiles are described by the TRIM results concerning the depth and shape of the maxima. The fluence dependent saturation behaviour of point defect density indicates that defect recombination processes are important at room temperature. The higher degree of remaining defects in compounds is attributed to the formation of antisite defects.

Original languageEnglish
Pages (from-to)443-449,IN15-IN16
JournalNuclear Inst. and Methods in Physics Research, B
Volume68
Issue number1-4
DOIs
Publication statusPublished - May 2 1992

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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