Study of low-energy atomic mixing by means of auger depth profiling, XTEM and TRIM simulation on Ge/Si multilayer system

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Abstract

Low-energy atomic mixing is experimentally studied on a Ge/Si amorphous multilayer system by means of Auger depth profiling and XTEM. The ion etching was performed by using Ar ions of energy 500 eV (XTEM) and 618 eV (Auger) and angle of incidence >84° and the specimen was rotated during sputtering. Applying these conditions it is believed that the interface broadening occurs mainly because of atomic mixing because the surface roughening is negligible. The Auger depth profile was carried out on a specimen containing Ge/Si strips parallel to the surface. The extent of the atomic mixing was determined by comparing the depth profile to profiles provided by dynamic TRIM simulation. For ion milling another geometry was used; the Ge/Si strips were perpendicular to the surface. A very thin (2 nm) TEM specimen was prepared and the thickness of the completely mixed region could be directly estimated from the TEM image: 1 nm at 500 eV ion energy and 85° angle of incidence. The TEM image also shows that the atomic mixed region is asymmetric.

Original languageEnglish
Pages (from-to)476-480
Number of pages5
JournalSurface and Interface Analysis
Volume24
Issue number7
Publication statusPublished - Jul 1996

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Depth profiling
nuclear energy
Nuclear energy
Multilayers
Ions
Transmission electron microscopy
transmission electron microscopy
strip
ions
simulation
profiles
incidence
Sputtering
Etching
sputtering
etching
Geometry
energy
Computer simulation
geometry

ASJC Scopus subject areas

  • Colloid and Surface Chemistry
  • Physical and Theoretical Chemistry

Cite this

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title = "Study of low-energy atomic mixing by means of auger depth profiling, XTEM and TRIM simulation on Ge/Si multilayer system",
abstract = "Low-energy atomic mixing is experimentally studied on a Ge/Si amorphous multilayer system by means of Auger depth profiling and XTEM. The ion etching was performed by using Ar ions of energy 500 eV (XTEM) and 618 eV (Auger) and angle of incidence >84° and the specimen was rotated during sputtering. Applying these conditions it is believed that the interface broadening occurs mainly because of atomic mixing because the surface roughening is negligible. The Auger depth profile was carried out on a specimen containing Ge/Si strips parallel to the surface. The extent of the atomic mixing was determined by comparing the depth profile to profiles provided by dynamic TRIM simulation. For ion milling another geometry was used; the Ge/Si strips were perpendicular to the surface. A very thin (2 nm) TEM specimen was prepared and the thickness of the completely mixed region could be directly estimated from the TEM image: 1 nm at 500 eV ion energy and 85° angle of incidence. The TEM image also shows that the atomic mixed region is asymmetric.",
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AU - Barna, A.

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N2 - Low-energy atomic mixing is experimentally studied on a Ge/Si amorphous multilayer system by means of Auger depth profiling and XTEM. The ion etching was performed by using Ar ions of energy 500 eV (XTEM) and 618 eV (Auger) and angle of incidence >84° and the specimen was rotated during sputtering. Applying these conditions it is believed that the interface broadening occurs mainly because of atomic mixing because the surface roughening is negligible. The Auger depth profile was carried out on a specimen containing Ge/Si strips parallel to the surface. The extent of the atomic mixing was determined by comparing the depth profile to profiles provided by dynamic TRIM simulation. For ion milling another geometry was used; the Ge/Si strips were perpendicular to the surface. A very thin (2 nm) TEM specimen was prepared and the thickness of the completely mixed region could be directly estimated from the TEM image: 1 nm at 500 eV ion energy and 85° angle of incidence. The TEM image also shows that the atomic mixed region is asymmetric.

AB - Low-energy atomic mixing is experimentally studied on a Ge/Si amorphous multilayer system by means of Auger depth profiling and XTEM. The ion etching was performed by using Ar ions of energy 500 eV (XTEM) and 618 eV (Auger) and angle of incidence >84° and the specimen was rotated during sputtering. Applying these conditions it is believed that the interface broadening occurs mainly because of atomic mixing because the surface roughening is negligible. The Auger depth profile was carried out on a specimen containing Ge/Si strips parallel to the surface. The extent of the atomic mixing was determined by comparing the depth profile to profiles provided by dynamic TRIM simulation. For ion milling another geometry was used; the Ge/Si strips were perpendicular to the surface. A very thin (2 nm) TEM specimen was prepared and the thickness of the completely mixed region could be directly estimated from the TEM image: 1 nm at 500 eV ion energy and 85° angle of incidence. The TEM image also shows that the atomic mixed region is asymmetric.

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