Study of ion mixing during Auger electron spectroscopy depth profiling of Ge-Si multilayer system

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Abstract

Auger electron spectroscopy depth profiling was carried out on a Ge-Si multilayer structure using a rotated specimen and grazing incidence angle. Under these sputtering conditions the depth resolution is determined mainly by atomic mixing. The dependence of the experimentally measured depth resolution on incidence angle and energy was compared with the simulation results from a trim code. It was found that the trends of the dependencies were the same, but the TRIM absolute values were different.

Original languageEnglish
Pages (from-to)2368-2372
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume12
Issue number4
DOIs
Publication statusPublished - Jul 1994

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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