Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry

A. Simon; A. Csik; F. Pászti; Á Z. Kiss; D. L. Beke; L. Daróczi; Z. Erdélyi; G. A. Langer

doi:10.1016/S0168-583X(99)00966-0

Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry

A. Simon, A. Csik, F. Pászti, Á Z. Kiss, D. L. Beke, L. Daróczi, Z. Erdélyi, G. A. Langer

Research output: Contribution to journal › Conference article

11 Citations (Scopus)

Abstract

Amorphous Si/Ge multilayers of 10-40 nm repeat length were prepared by DC magnetron sputtering and annealed at 683 K. Rutherford backscattering spectrometry (RBS) with increased depth resolution was applied to study the intermixing of the elements. The interdiffusion coefficient was determined by measuring the intensity of the first Ge peak in the RBS spectrum as a function of annealing time. An attempt was made to observe the theoretically predicted change of dimensions of the Si/Ge layers caused by the diffusion asymmetry.

Original language	English
Pages (from-to)	471-475
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	161
DOIs	https://doi.org/10.1016/S0168-583X(99)00966-0
Publication status	Published - Mar 2000
Event	The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology - Dresden, Ger Duration: Jul 26 1999 → Jul 30 1999

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ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Cite this

Simon, A., Csik, A., Pászti, F., Kiss, Á. Z., Beke, D. L., Daróczi, L., Erdélyi, Z., & Langer, G. A. (2000). Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 161, 471-475. https://doi.org/10.1016/S0168-583X(99)00966-0

Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry. / Simon, A.; Csik, A.; Pászti, F.; Kiss, Á Z.; Beke, D. L.; Daróczi, L.; Erdélyi, Z.; Langer, G. A.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 161, 03.2000, p. 471-475.

Research output: Contribution to journal › Conference article

Simon, A, Csik, A , Pászti, F , Kiss, ÁZ , Beke, DL , Daróczi, L , Erdélyi, Z & Langer, GA 2000, 'Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 161, pp. 471-475. https://doi.org/10.1016/S0168-583X(99)00966-0

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abstract = "Amorphous Si/Ge multilayers of 10-40 nm repeat length were prepared by DC magnetron sputtering and annealed at 683 K. Rutherford backscattering spectrometry (RBS) with increased depth resolution was applied to study the intermixing of the elements. The interdiffusion coefficient was determined by measuring the intensity of the first Ge peak in the RBS spectrum as a function of annealing time. An attempt was made to observe the theoretically predicted change of dimensions of the Si/Ge layers caused by the diffusion asymmetry.",

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AU - Daróczi, L.

AU - Erdélyi, Z.

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AB - Amorphous Si/Ge multilayers of 10-40 nm repeat length were prepared by DC magnetron sputtering and annealed at 683 K. Rutherford backscattering spectrometry (RBS) with increased depth resolution was applied to study the intermixing of the elements. The interdiffusion coefficient was determined by measuring the intensity of the first Ge peak in the RBS spectrum as a function of annealing time. An attempt was made to observe the theoretically predicted change of dimensions of the Si/Ge layers caused by the diffusion asymmetry.

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JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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10.1016/S0168-583X(99)00966-0