Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry

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Abstract

Amorphous Si/Ge multilayers of 10-40 nm repeat length were prepared by DC magnetron sputtering and annealed at 683 K. Rutherford backscattering spectrometry (RBS) with increased depth resolution was applied to study the intermixing of the elements. The interdiffusion coefficient was determined by measuring the intensity of the first Ge peak in the RBS spectrum as a function of annealing time. An attempt was made to observe the theoretically predicted change of dimensions of the Si/Ge layers caused by the diffusion asymmetry.

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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