Abstract
Amorphous Si/Ge multilayers of 10-40 nm repeat length were prepared by DC magnetron sputtering and annealed at 683 K. Rutherford backscattering spectrometry (RBS) with increased depth resolution was applied to study the intermixing of the elements. The interdiffusion coefficient was determined by measuring the intensity of the first Ge peak in the RBS spectrum as a function of annealing time. An attempt was made to observe the theoretically predicted change of dimensions of the Si/Ge layers caused by the diffusion asymmetry.
| Original language | English |
|---|---|
| Pages (from-to) | 471-475 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 161 |
| DOIs | |
| Publication status | Published - Mar 2000 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
Cite this
Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry. / Simon, A.; Csík, A.; Pászti, F.; Kiss, A.; Beke, D.; Daróczi, L.; Erdélyi, Z.; Langer, G.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 161, 03.2000, p. 471-475.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry
AU - Simon, A.
AU - Csík, A.
AU - Pászti, F.
AU - Kiss, A.
AU - Beke, D.
AU - Daróczi, L.
AU - Erdélyi, Z.
AU - Langer, G.
PY - 2000/3
Y1 - 2000/3
N2 - Amorphous Si/Ge multilayers of 10-40 nm repeat length were prepared by DC magnetron sputtering and annealed at 683 K. Rutherford backscattering spectrometry (RBS) with increased depth resolution was applied to study the intermixing of the elements. The interdiffusion coefficient was determined by measuring the intensity of the first Ge peak in the RBS spectrum as a function of annealing time. An attempt was made to observe the theoretically predicted change of dimensions of the Si/Ge layers caused by the diffusion asymmetry.
AB - Amorphous Si/Ge multilayers of 10-40 nm repeat length were prepared by DC magnetron sputtering and annealed at 683 K. Rutherford backscattering spectrometry (RBS) with increased depth resolution was applied to study the intermixing of the elements. The interdiffusion coefficient was determined by measuring the intensity of the first Ge peak in the RBS spectrum as a function of annealing time. An attempt was made to observe the theoretically predicted change of dimensions of the Si/Ge layers caused by the diffusion asymmetry.
UR - http://www.scopus.com/inward/record.url?scp=0033907433&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033907433&partnerID=8YFLogxK
U2 - 10.1016/S0168-583X(99)00966-0
DO - 10.1016/S0168-583X(99)00966-0
M3 - Article
AN - SCOPUS:0033907433
VL - 161
SP - 471
EP - 475
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
ER -