Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry

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Abstract

Amorphous Si/Ge multilayers of 10-40 nm repeat length were prepared by DC magnetron sputtering and annealed at 683 K. Rutherford backscattering spectrometry (RBS) with increased depth resolution was applied to study the intermixing of the elements. The interdiffusion coefficient was determined by measuring the intensity of the first Ge peak in the RBS spectrum as a function of annealing time. An attempt was made to observe the theoretically predicted change of dimensions of the Si/Ge layers caused by the diffusion asymmetry.

Original languageEnglish
Pages (from-to)471-475
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume161
DOIs
Publication statusPublished - Mar 2000

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Rutherford backscattering spectroscopy
Spectrometry
backscattering
Multilayers
Magnetron sputtering
spectroscopy
magnetron sputtering
direct current
asymmetry
Annealing
annealing
coefficients

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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title = "Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry",
abstract = "Amorphous Si/Ge multilayers of 10-40 nm repeat length were prepared by DC magnetron sputtering and annealed at 683 K. Rutherford backscattering spectrometry (RBS) with increased depth resolution was applied to study the intermixing of the elements. The interdiffusion coefficient was determined by measuring the intensity of the first Ge peak in the RBS spectrum as a function of annealing time. An attempt was made to observe the theoretically predicted change of dimensions of the Si/Ge layers caused by the diffusion asymmetry.",
author = "A. Simon and A. Cs{\'i}k and F. P{\'a}szti and A. Kiss and D. Beke and L. Dar{\'o}czi and Z. Erd{\'e}lyi and G. Langer",
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T1 - Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry

AU - Simon, A.

AU - Csík, A.

AU - Pászti, F.

AU - Kiss, A.

AU - Beke, D.

AU - Daróczi, L.

AU - Erdélyi, Z.

AU - Langer, G.

PY - 2000/3

Y1 - 2000/3

N2 - Amorphous Si/Ge multilayers of 10-40 nm repeat length were prepared by DC magnetron sputtering and annealed at 683 K. Rutherford backscattering spectrometry (RBS) with increased depth resolution was applied to study the intermixing of the elements. The interdiffusion coefficient was determined by measuring the intensity of the first Ge peak in the RBS spectrum as a function of annealing time. An attempt was made to observe the theoretically predicted change of dimensions of the Si/Ge layers caused by the diffusion asymmetry.

AB - Amorphous Si/Ge multilayers of 10-40 nm repeat length were prepared by DC magnetron sputtering and annealed at 683 K. Rutherford backscattering spectrometry (RBS) with increased depth resolution was applied to study the intermixing of the elements. The interdiffusion coefficient was determined by measuring the intensity of the first Ge peak in the RBS spectrum as a function of annealing time. An attempt was made to observe the theoretically predicted change of dimensions of the Si/Ge layers caused by the diffusion asymmetry.

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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