Amorphous Si/Ge multilayers of 10-40 nm repeat length were prepared by DC magnetron sputtering and annealed at 683 K. Rutherford backscattering spectrometry (RBS) with increased depth resolution was applied to study the intermixing of the elements. The interdiffusion coefficient was determined by measuring the intensity of the first Ge peak in the RBS spectrum as a function of annealing time. An attempt was made to observe the theoretically predicted change of dimensions of the Si/Ge layers caused by the diffusion asymmetry.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - Mar 2000|
|Event||The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology - Dresden, Ger|
Duration: Jul 26 1999 → Jul 30 1999
ASJC Scopus subject areas
- Nuclear and High Energy Physics