Study of GaAs MBE growth under Ga-rich conditions by RHEED intensity oscillations

A. Bosacchi, S. Franchi, Yu O. Kanter, S. I. Chikichev

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We report on the study of RHEED intensity oscillations observed during the MBE growth of GaAs performed under various conditions. We experimentally show that under Ga-rich conditions, the growth rate has different values when a Ga-rich surface liquid phase is being formed or exhausted on the GaAs solid phase. Under the assumption that the surface liquid phase may also incorporate As, we develop a quantitative model which (1) explains the experimental data and (2) allows for the evaluation of the Ga mole fraction in the surface liquid phase. From these data, we conclude that the liquidus temperature of the surface liquid phase is approximately 2 3 of that of the bulk GaAs system. This result points to a relevant contribution of the surface energy to the free energy of the liquid phase.

Original languageEnglish
Pages (from-to)899-905
Number of pages7
JournalJournal of Crystal Growth
Volume96
Issue number4
DOIs
Publication statusPublished - Aug 1989

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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