Study of ALMBE growth conditions for the preparation of compositionally graded AlGaAs/GaAs structures

M. Madella, A. Bosacchi, S. Franchi, P. Allegri, V. Avanzini

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We have studied ALMBE growth conditions which give high quality structures with continuous or abrupt grading of Ga1-xAlxAs composition. Four 50 Å thick GaAs/Alx(i)Ga1-x(i)As (x(i)=0.3, 0.5, 0.7 and 1.0) quantum wells (QWs) and a direct-gap (GaAs)9/(AlAs)2 superlattice were stacked on the same sample by changing the supply times of cations instead of modifying molecular beam fluxes (x resolution {reversed tilde} 1%). Linewidths of photoluminescence (PL) transitions, as narrow as 2.0-2.5 meV, suggest that interfaces grown at low temperature are pseudosmooth. We have also grown parabolically graded QWs that exhibit remarkably sharp PL linewidths and show exciton transitions, observed by optical absorption measurements, at energies very close to the expected values.

Original languageEnglish
Pages (from-to)270-273
Number of pages4
JournalJournal of Crystal Growth
Volume127
Issue number1-4
DOIs
Publication statusPublished - Feb 2 1993

Fingerprint

Linewidth
Semiconductor quantum wells
aluminum gallium arsenides
Photoluminescence
quantum wells
photoluminescence
preparation
Molecular beams
Electron transitions
Excitons
Light absorption
molecular beams
Cations
optical absorption
Positive ions
excitons
Fluxes
cations
Chemical analysis
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Study of ALMBE growth conditions for the preparation of compositionally graded AlGaAs/GaAs structures. / Madella, M.; Bosacchi, A.; Franchi, S.; Allegri, P.; Avanzini, V.

In: Journal of Crystal Growth, Vol. 127, No. 1-4, 02.02.1993, p. 270-273.

Research output: Contribution to journalArticle

Madella, M. ; Bosacchi, A. ; Franchi, S. ; Allegri, P. ; Avanzini, V. / Study of ALMBE growth conditions for the preparation of compositionally graded AlGaAs/GaAs structures. In: Journal of Crystal Growth. 1993 ; Vol. 127, No. 1-4. pp. 270-273.
@article{a7aab9a7eafc4a92ac371a16a68dd294,
title = "Study of ALMBE growth conditions for the preparation of compositionally graded AlGaAs/GaAs structures",
abstract = "We have studied ALMBE growth conditions which give high quality structures with continuous or abrupt grading of Ga1-xAlxAs composition. Four 50 {\AA} thick GaAs/Alx(i)Ga1-x(i)As (x(i)=0.3, 0.5, 0.7 and 1.0) quantum wells (QWs) and a direct-gap (GaAs)9/(AlAs)2 superlattice were stacked on the same sample by changing the supply times of cations instead of modifying molecular beam fluxes (x resolution {reversed tilde} 1{\%}). Linewidths of photoluminescence (PL) transitions, as narrow as 2.0-2.5 meV, suggest that interfaces grown at low temperature are pseudosmooth. We have also grown parabolically graded QWs that exhibit remarkably sharp PL linewidths and show exciton transitions, observed by optical absorption measurements, at energies very close to the expected values.",
author = "M. Madella and A. Bosacchi and S. Franchi and P. Allegri and V. Avanzini",
year = "1993",
month = "2",
day = "2",
doi = "10.1016/0022-0248(93)90620-C",
language = "English",
volume = "127",
pages = "270--273",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Study of ALMBE growth conditions for the preparation of compositionally graded AlGaAs/GaAs structures

AU - Madella, M.

AU - Bosacchi, A.

AU - Franchi, S.

AU - Allegri, P.

AU - Avanzini, V.

PY - 1993/2/2

Y1 - 1993/2/2

N2 - We have studied ALMBE growth conditions which give high quality structures with continuous or abrupt grading of Ga1-xAlxAs composition. Four 50 Å thick GaAs/Alx(i)Ga1-x(i)As (x(i)=0.3, 0.5, 0.7 and 1.0) quantum wells (QWs) and a direct-gap (GaAs)9/(AlAs)2 superlattice were stacked on the same sample by changing the supply times of cations instead of modifying molecular beam fluxes (x resolution {reversed tilde} 1%). Linewidths of photoluminescence (PL) transitions, as narrow as 2.0-2.5 meV, suggest that interfaces grown at low temperature are pseudosmooth. We have also grown parabolically graded QWs that exhibit remarkably sharp PL linewidths and show exciton transitions, observed by optical absorption measurements, at energies very close to the expected values.

AB - We have studied ALMBE growth conditions which give high quality structures with continuous or abrupt grading of Ga1-xAlxAs composition. Four 50 Å thick GaAs/Alx(i)Ga1-x(i)As (x(i)=0.3, 0.5, 0.7 and 1.0) quantum wells (QWs) and a direct-gap (GaAs)9/(AlAs)2 superlattice were stacked on the same sample by changing the supply times of cations instead of modifying molecular beam fluxes (x resolution {reversed tilde} 1%). Linewidths of photoluminescence (PL) transitions, as narrow as 2.0-2.5 meV, suggest that interfaces grown at low temperature are pseudosmooth. We have also grown parabolically graded QWs that exhibit remarkably sharp PL linewidths and show exciton transitions, observed by optical absorption measurements, at energies very close to the expected values.

UR - http://www.scopus.com/inward/record.url?scp=0027904738&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027904738&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(93)90620-C

DO - 10.1016/0022-0248(93)90620-C

M3 - Article

AN - SCOPUS:0027904738

VL - 127

SP - 270

EP - 273

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -