Abstract
In this study, rf sputtered hydrogenated amorphous silicon-germanium thin films deposited at room temperature have been investigated by spectroscopic ellipsometry and Rutherford backscattering. Technological parameters were determined for good layer quality of amorphous material. The layer thicknesses were first evaluated from the Rutherford backscattering and spectroscopic ellipsometry measurements, then measured directly by step-profiler, and compared to each other. The inherence of technological parameters and composition of the layers is discussed.
Original language | English |
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Pages (from-to) | 3-6 |
Number of pages | 4 |
Journal | Inorganic Materials |
Volume | 42 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 2006 |
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ASJC Scopus subject areas
- Materials Science(all)
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Studies on the RF sputtered amorphous SiGe thin films. / Serényi, M.; Lohner, T.; Zolnai, Z.; Petrik, P.; Nemcsics, Á; Khánh, N. Q.; Turmezei, P.
In: Inorganic Materials, Vol. 42, No. 1, 01.2006, p. 3-6.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Studies on the RF sputtered amorphous SiGe thin films
AU - Serényi, M.
AU - Lohner, T.
AU - Zolnai, Z.
AU - Petrik, P.
AU - Nemcsics, Á
AU - Khánh, N. Q.
AU - Turmezei, P.
PY - 2006/1
Y1 - 2006/1
N2 - In this study, rf sputtered hydrogenated amorphous silicon-germanium thin films deposited at room temperature have been investigated by spectroscopic ellipsometry and Rutherford backscattering. Technological parameters were determined for good layer quality of amorphous material. The layer thicknesses were first evaluated from the Rutherford backscattering and spectroscopic ellipsometry measurements, then measured directly by step-profiler, and compared to each other. The inherence of technological parameters and composition of the layers is discussed.
AB - In this study, rf sputtered hydrogenated amorphous silicon-germanium thin films deposited at room temperature have been investigated by spectroscopic ellipsometry and Rutherford backscattering. Technological parameters were determined for good layer quality of amorphous material. The layer thicknesses were first evaluated from the Rutherford backscattering and spectroscopic ellipsometry measurements, then measured directly by step-profiler, and compared to each other. The inherence of technological parameters and composition of the layers is discussed.
UR - http://www.scopus.com/inward/record.url?scp=33644668709&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33644668709&partnerID=8YFLogxK
U2 - 10.1134/S002016850601002X
DO - 10.1134/S002016850601002X
M3 - Article
AN - SCOPUS:33644668709
VL - 42
SP - 3
EP - 6
JO - Inorganic Materials
JF - Inorganic Materials
SN - 0020-1685
IS - 1
ER -