Studies on the RF sputtered amorphous SiGe thin films

M. Serényi, T. Lohner, Z. Zolnai, P. Petrik, Á Nemcsics, N. Q. Khánh, P. Turmezei

Research output: Contribution to journalArticle

Abstract

In this study, rf sputtered hydrogenated amorphous silicon-germanium thin films deposited at room temperature have been investigated by spectroscopic ellipsometry and Rutherford backscattering. Technological parameters were determined for good layer quality of amorphous material. The layer thicknesses were first evaluated from the Rutherford backscattering and spectroscopic ellipsometry measurements, then measured directly by step-profiler, and compared to each other. The inherence of technological parameters and composition of the layers is discussed.

Original languageEnglish
Pages (from-to)3-6
Number of pages4
JournalInorganic Materials
Volume42
Issue number1
DOIs
Publication statusPublished - Jan 2006

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Spectroscopic ellipsometry
Rutherford backscattering spectroscopy
Germanium
Thin films
Amorphous silicon
Chemical analysis
Temperature

ASJC Scopus subject areas

  • Materials Science(all)

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Studies on the RF sputtered amorphous SiGe thin films. / Serényi, M.; Lohner, T.; Zolnai, Z.; Petrik, P.; Nemcsics, Á; Khánh, N. Q.; Turmezei, P.

In: Inorganic Materials, Vol. 42, No. 1, 01.2006, p. 3-6.

Research output: Contribution to journalArticle

Serényi, M. ; Lohner, T. ; Zolnai, Z. ; Petrik, P. ; Nemcsics, Á ; Khánh, N. Q. ; Turmezei, P. / Studies on the RF sputtered amorphous SiGe thin films. In: Inorganic Materials. 2006 ; Vol. 42, No. 1. pp. 3-6.
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