Studies on the RF sputtered amorphous SiGe thin films

M. Serényi; T. Lohner; Z. Zolnai; P. Petrik; Á Nemcsics; N. Q. Khánh; P. Turmezei

doi:10.1134/S002016850601002X

Studies on the RF sputtered amorphous SiGe thin films

M. Serényi, T. Lohner, Z. Zolnai, P. Petrik, Á Nemcsics, N. Q. Khánh, P. Turmezei

Hungarian Academy of Sciences

Research output: Contribution to journal › Article

Abstract

In this study, rf sputtered hydrogenated amorphous silicon-germanium thin films deposited at room temperature have been investigated by spectroscopic ellipsometry and Rutherford backscattering. Technological parameters were determined for good layer quality of amorphous material. The layer thicknesses were first evaluated from the Rutherford backscattering and spectroscopic ellipsometry measurements, then measured directly by step-profiler, and compared to each other. The inherence of technological parameters and composition of the layers is discussed.

Original language	English
Pages (from-to)	3-6
Number of pages	4
Journal	Inorganic Materials
Volume	42
Issue number	1
DOIs	https://doi.org/10.1134/S002016850601002X
Publication status	Published - Jan 1 2006

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ASJC Scopus subject areas

Chemical Engineering(all)
Inorganic Chemistry
Metals and Alloys
Materials Chemistry

Cite this

Serényi, M., Lohner, T., Zolnai, Z., Petrik, P., Nemcsics, Á., Khánh, N. Q., & Turmezei, P. (2006). Studies on the RF sputtered amorphous SiGe thin films. Inorganic Materials, 42(1), 3-6. https://doi.org/10.1134/S002016850601002X

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10.1134/S002016850601002X