STRUCTURE, ORDERING AND ELECTRICAL CONDUCTION OF HIGH PURITY AMORPHOUS Ge FILMS.

A. Barna, P. B. Barna, Z. Bodo, J. F. Pocza, I. Pozsgai, G. Radnoczi

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Amorphous films of Ge deposited at temperatures ranging between minus 150 degree C and plus 220 degree C exhibit a rodlike structure which is related to a periodic fluctuation of the film density along the film plane. The size of the rods is dependent on the deposition temperature. In situ heat-treatment of the high purity films results in a better uniformity of the films as well as in simultaneous formation of bubbles. The conductivity and magnetoresistivity were also measured in situ. Methods for preparing Ge films of a dense and more uniform structure and for controlling the purity of films are proposed.

Original languageEnglish
Pages109-116
Number of pages8
Publication statusPublished - Jan 1 2017
EventInt Conf on Amorphous and Liq Semicond, 5th, Proc - Garmsich-Partenkirchen, W Ger
Duration: Sep 3 1973Sep 8 1973

Other

OtherInt Conf on Amorphous and Liq Semicond, 5th, Proc
CityGarmsich-Partenkirchen, W Ger
Period9/3/739/8/73

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Barna, A., Barna, P. B., Bodo, Z., Pocza, J. F., Pozsgai, I., & Radnoczi, G. (2017). STRUCTURE, ORDERING AND ELECTRICAL CONDUCTION OF HIGH PURITY AMORPHOUS Ge FILMS.. 109-116. Paper presented at Int Conf on Amorphous and Liq Semicond, 5th, Proc, Garmsich-Partenkirchen, W Ger, .