Structure of high-photosensitivity silicon-oxygen alloy films

H. Watanabe, K. Haga, T. Lohner

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

Amorphous silicon-oxygen alloy films with various composition have been prepared by r.f. glow discharge decomposition of SiH4 and CO2 gas mixtures. The analysis of infrared absorption spectra and x-ray photoemission spectra shows that the film consists of two phases, a silicon-rich phase and an oxygen-rich phase. We suggest that this two-phase structure results in the high photoconductivity with wide optical gap in these films.

Original languageEnglish
Pages (from-to)1085-1088
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 2
DOIs
Publication statusPublished - Dec 2 1993

Fingerprint

Photosensitivity
photosensitivity
Silicon
Oxygen
silicon
oxygen
Photoconductivity
Infrared absorption
Glow discharges
Photoemission
Phase structure
Amorphous silicon
Gas mixtures
glow discharges
photoconductivity
infrared absorption
amorphous silicon
gas mixtures
Absorption spectra
photoelectric emission

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Structure of high-photosensitivity silicon-oxygen alloy films. / Watanabe, H.; Haga, K.; Lohner, T.

In: Journal of Non-Crystalline Solids, Vol. 164-166, No. PART 2, 02.12.1993, p. 1085-1088.

Research output: Contribution to journalArticle

Watanabe, H. ; Haga, K. ; Lohner, T. / Structure of high-photosensitivity silicon-oxygen alloy films. In: Journal of Non-Crystalline Solids. 1993 ; Vol. 164-166, No. PART 2. pp. 1085-1088.
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