Structure of diamond-silicon carbide nanocomposites as a function of sintering temperature at 8 GPa

L. Balogh, S. Nauyoks, T. W. Zerda, C. Pantea, S. Stelmakh, B. Palosz, T. Ungár

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Nanosize diamond-silicon carbide composites have been sintered at high temperatures and a fixed pressure of about 8 GPa. Crystallite size, densities of stacking faults and dislocations in diamond and silicon carbide crystallites are determined by X-ray diffraction profile analysis. It has been shown that crystallite sizes increase while population of stacking faults and dislocations decrease with temperature increasing from 1820 °C to 2320 °C. These conclusions indicate that to produce composites with small residual stresses the sintering process should be conducted at the highest possible temperatures.

Original languageEnglish
Pages (from-to)180-188
Number of pages9
JournalMaterials Science and Engineering A
Volume487
Issue number1-2
DOIs
Publication statusPublished - Jul 25 2008

Fingerprint

Diamond
Silicon carbide
crystal defects
silicon carbides
Diamonds
Nanocomposites
nanocomposites
sintering
Sintering
diamonds
Stacking faults
Crystallite size
Dislocations (crystals)
composite materials
carbides
crystallites
residual stress
Composite materials
Crystallites
Temperature

Keywords

  • Composites
  • Diamond
  • Dislocations
  • Planar defects
  • Silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Structure of diamond-silicon carbide nanocomposites as a function of sintering temperature at 8 GPa. / Balogh, L.; Nauyoks, S.; Zerda, T. W.; Pantea, C.; Stelmakh, S.; Palosz, B.; Ungár, T.

In: Materials Science and Engineering A, Vol. 487, No. 1-2, 25.07.2008, p. 180-188.

Research output: Contribution to journalArticle

Balogh, L. ; Nauyoks, S. ; Zerda, T. W. ; Pantea, C. ; Stelmakh, S. ; Palosz, B. ; Ungár, T. / Structure of diamond-silicon carbide nanocomposites as a function of sintering temperature at 8 GPa. In: Materials Science and Engineering A. 2008 ; Vol. 487, No. 1-2. pp. 180-188.
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