Structure of DC sputtered Si-C-N thin films

G. Radnóczi, G. Sáfrán, Z. Czigány, T. Berlind, L. Hultman

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Si-C-N films of maximum 65 at.% of Si and maximum 40 at.% of N were prepared by reactive magnetron sputtering and their fine structure was investigated by high-resolution transmission electron microscopy. For compositions, where C-C and C-N bonds prevail, the films had anisotropic structure on the atomic scale, composed of curved graphitic layers, aligned parallel to the substrate normal. An isotropic structure was detected in the middle of the compositional triangle. On a larger scale, a columnar morphology, aligned in the direction of the deposition flux was formed in films containing more than 15 at.% of Si. Singular or simultaneous appearance of the above structures depended on film composition.

Original languageEnglish
Pages (from-to)41-44
Number of pages4
JournalThin Solid Films
Volume440
Issue number1-2
DOIs
Publication statusPublished - Sep 1 2003

Fingerprint

direct current
Thin films
thin films
Reactive sputtering
High resolution transmission electron microscopy
Chemical analysis
triangles
Magnetron sputtering
magnetron sputtering
fine structure
Fluxes
transmission electron microscopy
high resolution
Substrates

Keywords

  • Electron microscopy
  • Graphite-like
  • Si-C-N
  • Structure

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Structure of DC sputtered Si-C-N thin films. / Radnóczi, G.; Sáfrán, G.; Czigány, Z.; Berlind, T.; Hultman, L.

In: Thin Solid Films, Vol. 440, No. 1-2, 01.09.2003, p. 41-44.

Research output: Contribution to journalArticle

Radnóczi, G. ; Sáfrán, G. ; Czigány, Z. ; Berlind, T. ; Hultman, L. / Structure of DC sputtered Si-C-N thin films. In: Thin Solid Films. 2003 ; Vol. 440, No. 1-2. pp. 41-44.
@article{461387cdf93e4107bf520139d27860ed,
title = "Structure of DC sputtered Si-C-N thin films",
abstract = "Si-C-N films of maximum 65 at.{\%} of Si and maximum 40 at.{\%} of N were prepared by reactive magnetron sputtering and their fine structure was investigated by high-resolution transmission electron microscopy. For compositions, where C-C and C-N bonds prevail, the films had anisotropic structure on the atomic scale, composed of curved graphitic layers, aligned parallel to the substrate normal. An isotropic structure was detected in the middle of the compositional triangle. On a larger scale, a columnar morphology, aligned in the direction of the deposition flux was formed in films containing more than 15 at.{\%} of Si. Singular or simultaneous appearance of the above structures depended on film composition.",
keywords = "Electron microscopy, Graphite-like, Si-C-N, Structure",
author = "G. Radn{\'o}czi and G. S{\'a}fr{\'a}n and Z. Czig{\'a}ny and T. Berlind and L. Hultman",
year = "2003",
month = "9",
day = "1",
doi = "10.1016/S0040-6090(03)00860-5",
language = "English",
volume = "440",
pages = "41--44",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Structure of DC sputtered Si-C-N thin films

AU - Radnóczi, G.

AU - Sáfrán, G.

AU - Czigány, Z.

AU - Berlind, T.

AU - Hultman, L.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - Si-C-N films of maximum 65 at.% of Si and maximum 40 at.% of N were prepared by reactive magnetron sputtering and their fine structure was investigated by high-resolution transmission electron microscopy. For compositions, where C-C and C-N bonds prevail, the films had anisotropic structure on the atomic scale, composed of curved graphitic layers, aligned parallel to the substrate normal. An isotropic structure was detected in the middle of the compositional triangle. On a larger scale, a columnar morphology, aligned in the direction of the deposition flux was formed in films containing more than 15 at.% of Si. Singular or simultaneous appearance of the above structures depended on film composition.

AB - Si-C-N films of maximum 65 at.% of Si and maximum 40 at.% of N were prepared by reactive magnetron sputtering and their fine structure was investigated by high-resolution transmission electron microscopy. For compositions, where C-C and C-N bonds prevail, the films had anisotropic structure on the atomic scale, composed of curved graphitic layers, aligned parallel to the substrate normal. An isotropic structure was detected in the middle of the compositional triangle. On a larger scale, a columnar morphology, aligned in the direction of the deposition flux was formed in films containing more than 15 at.% of Si. Singular or simultaneous appearance of the above structures depended on film composition.

KW - Electron microscopy

KW - Graphite-like

KW - Si-C-N

KW - Structure

UR - http://www.scopus.com/inward/record.url?scp=0042623356&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042623356&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(03)00860-5

DO - 10.1016/S0040-6090(03)00860-5

M3 - Article

AN - SCOPUS:0042623356

VL - 440

SP - 41

EP - 44

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -