Structure of amorphous carbon-nitride thin films

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

CNx thin films were prepared in high vacuum by evaporation of C from a pair of graphite rods in a DC arc ignited in N2 at pressures of up to 1 mbar onto NaCl, Highly ordered pyrolytic graphite (HOPG) and Si substrates. The substrate temperature varied between room temperature and 800 °C. The effect of deposition temperature and N2 gas pressure on the morphology, structure, composition and electrical properties of CNx thin films was studied by high-resolution transmission electron microscopy (HRTEM), X-ray microanalysis (EDS), and scanning tunneling microscopy and spectroscopy (STM and STS). Morphology ranging from homogeneous layers through spherical or cylindrical particles embedded into the films to low-density globular deposits of CNx was observed as a function of the applied N2 gas pressure. The N composition found was between 1 and 20 at.% and the structure varied from amorphous through fullerene-like to nanocrystalline diamond composed of amorphous CNx, depending on the temperature and the plasma parameters. The behavior of the films during heat treatment was recorded by electrical conductivity measurements. The activation energy of electrical conductivity was found to be 0.18 eV for carbon and 0.38 eV for CNx, films and was independent of the deposition temperature.

Original languageEnglish
Pages (from-to)133-137
Number of pages5
JournalSurface and Coatings Technology
Volume151-152
DOIs
Publication statusPublished - Mar 1 2002

Fingerprint

carbon nitrides
Carbon nitride
Amorphous carbon
Thin films
thin films
Graphite
gas pressure
Temperature
Gases
electrical resistivity
temperature
pyrolytic graphite
Fullerenes
high vacuum
microanalysis
Diamond
fullerenes
Microanalysis
scanning tunneling microscopy
Scanning tunneling microscopy

Keywords

  • Carbon nitride
  • Electrical conductivity
  • Electron microscopy
  • Scanning tunneling microscopy
  • Scanning tunneling spectroscopy
  • Structure

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Structure of amorphous carbon-nitride thin films. / Radnóczi, G.; Kovács, I.; Geszti, O.; Bíró, L.; Sáfrán, G.

In: Surface and Coatings Technology, Vol. 151-152, 01.03.2002, p. 133-137.

Research output: Contribution to journalArticle

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AU - Radnóczi, G.

AU - Kovács, I.

AU - Geszti, O.

AU - Bíró, L.

AU - Sáfrán, G.

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AB - CNx thin films were prepared in high vacuum by evaporation of C from a pair of graphite rods in a DC arc ignited in N2 at pressures of up to 1 mbar onto NaCl, Highly ordered pyrolytic graphite (HOPG) and Si substrates. The substrate temperature varied between room temperature and 800 °C. The effect of deposition temperature and N2 gas pressure on the morphology, structure, composition and electrical properties of CNx thin films was studied by high-resolution transmission electron microscopy (HRTEM), X-ray microanalysis (EDS), and scanning tunneling microscopy and spectroscopy (STM and STS). Morphology ranging from homogeneous layers through spherical or cylindrical particles embedded into the films to low-density globular deposits of CNx was observed as a function of the applied N2 gas pressure. The N composition found was between 1 and 20 at.% and the structure varied from amorphous through fullerene-like to nanocrystalline diamond composed of amorphous CNx, depending on the temperature and the plasma parameters. The behavior of the films during heat treatment was recorded by electrical conductivity measurements. The activation energy of electrical conductivity was found to be 0.18 eV for carbon and 0.38 eV for CNx, films and was independent of the deposition temperature.

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