Structure and photoluminescence of the a-GexSe1-x system

V. P. Izvekov, M. Koós, Kósa Somogyi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

GeGe like-bonds are formed in as-deposited films at x < 0.33 i.e. they are both chemically and structurally disordered. Photoluminescence (PL) intensity along with the fatigue of PL is presumably controlled by the positions of the demarcation levels which are displaced by changing the concentrations and cross sections of the recombination centres. The increase of Se content in these binary alloys leads to an increase of the concentration of non-radiative recombination centres. During fatigue both new centres are created and the cross sections of the pre-existing ones are changed.

Original languageEnglish
Pages (from-to)1011-1014
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume59-60
Issue numberPART 2
DOIs
Publication statusPublished - Dec 1983

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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