Structure and optical properties of pulsed-laser-deposited AlN thin films for optoelectronic applications

S. Bakalova, A. Szekeres, A. Cziráki, S. Grigorescu, G. Socol, E. Axente, I. N. Mihailescu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The structure and optical properties of AlN thin films synthesized at 800°C by Pulsed Laser Deposition were studied in terms of ambient nitrogen pressure ( 10-4- 10 Pa) and post-deposition cooling rate (5-25°C/min). X-ray diffraction patterns showed the films were polycrystalline with predominantly cubic phase and small-sized crystallites. The refractive index and oscillator energies values were also characteristic of the polycrystalline AlN with cubic structure.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6785
DOIs
Publication statusPublished - 2007
EventROMOPTO 2006: Eighth Conference on Optics - Sibiu
Duration: Sep 4 2006Sep 7 2006

Other

OtherROMOPTO 2006: Eighth Conference on Optics
CitySibiu
Period9/4/069/7/06

Fingerprint

Pulsed laser deposition
Pulsed lasers
Crystallites
Optoelectronic devices
Diffraction patterns
crystallites
pulsed laser deposition
pulsed lasers
Refractive index
diffraction patterns
Optical properties
oscillators
refractivity
Nitrogen
Cooling
cooling
optical properties
nitrogen
X ray diffraction
Thin films

Keywords

  • Aluminium nitride
  • Crystallographic structure
  • Optical properties
  • Polytypes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Bakalova, S., Szekeres, A., Cziráki, A., Grigorescu, S., Socol, G., Axente, E., & Mihailescu, I. N. (2007). Structure and optical properties of pulsed-laser-deposited AlN thin films for optoelectronic applications. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6785). [67850H] https://doi.org/10.1117/12.756820

Structure and optical properties of pulsed-laser-deposited AlN thin films for optoelectronic applications. / Bakalova, S.; Szekeres, A.; Cziráki, A.; Grigorescu, S.; Socol, G.; Axente, E.; Mihailescu, I. N.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6785 2007. 67850H.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bakalova, S, Szekeres, A, Cziráki, A, Grigorescu, S, Socol, G, Axente, E & Mihailescu, IN 2007, Structure and optical properties of pulsed-laser-deposited AlN thin films for optoelectronic applications. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6785, 67850H, ROMOPTO 2006: Eighth Conference on Optics, Sibiu, 9/4/06. https://doi.org/10.1117/12.756820
Bakalova S, Szekeres A, Cziráki A, Grigorescu S, Socol G, Axente E et al. Structure and optical properties of pulsed-laser-deposited AlN thin films for optoelectronic applications. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6785. 2007. 67850H https://doi.org/10.1117/12.756820
Bakalova, S. ; Szekeres, A. ; Cziráki, A. ; Grigorescu, S. ; Socol, G. ; Axente, E. ; Mihailescu, I. N. / Structure and optical properties of pulsed-laser-deposited AlN thin films for optoelectronic applications. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6785 2007.
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