Structural transformations and their relation to the optoelectronic properties of chromium oxide thin films

T. Ivanova, K. Gesheva, A. Cziráki, A. Szekeres, E. Vlaikova

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The crystallization behavior of chemically vapor deposited chromium oxide films was characterized by X-Ray diffractometry and the vibrational properties of the films were analyzed by Fourier transform infrared (FTIR) spectroscopy as a function of the annealing temperature and the technological conditions. The effect of the oxygen content in the CVD reactor on the optical characteristics (complex refractive index, optical band gap) was considered.

Original languageEnglish
Article number012030
JournalJournal of Physics: Conference Series
Volume113
Issue number1
DOIs
Publication statusPublished - May 1 2008

Fingerprint

chromium oxides
oxide films
infrared spectroscopy
reactors
vapor deposition
vapors
crystallization
refractivity
annealing
oxygen
thin films
x rays
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Structural transformations and their relation to the optoelectronic properties of chromium oxide thin films. / Ivanova, T.; Gesheva, K.; Cziráki, A.; Szekeres, A.; Vlaikova, E.

In: Journal of Physics: Conference Series, Vol. 113, No. 1, 012030, 01.05.2008.

Research output: Contribution to journalArticle

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