Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

C. Frigeri, M. Serényi, A. Csik, Z. Erdélyi, D. L. Beke, L. Nasi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for the less severe conditions here applied (150 °C, time < 22 h). For higher temperatures and/or times, the modifications consist of layer intermixing and surface degradation in the shape of bumps and craters. They are argued to be due to the formation of H bubbles upon heating. Hydrogen should be mostly released from the amorphous Ge layers.

Original languageEnglish
Pages (from-to)S289-S293
JournalJournal of Materials Science: Materials in Electronics
Volume19
Issue numberSUPPL. 1
DOIs
Publication statusPublished - Jan 1 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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