Structural modification of boron-doped ZnO layers caused by hydrogen outgassing

R. Lovics, A. Csik, V. Takáts, J. Hakl, K. Vad

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Results of annealing experiments of boron-doped zinc oxide (ZnO:B) layers prepared by low pressure chemical vapor deposition method on polished Si, soda-lime glass for windows, and AF45 Schott alkali free thin glass substrates are presented. It is shown that short annealing of samples at 150 °C and 300 °C in air causes serious surface degradation of samples prepared on Si and soda-lime glass substrate. The characteristic feature of degradation is the creation of bubbles and craters on the sample surface which fully destroy the continuity of zinc oxide layers. The results of depth distribution mapping of elements indicate that the formation of bubbles is linked to increase in hydrogen concentration in the layer. The surface degradation was not noticed on samples deposited on AF45 Schott alkali free thin glass which has a SiO2 diffusion barrier layer on the surface, only much fewer and smaller bubbles were visible. The results indicate the important role of hydrogen outgassing from the substrate induced by a thermal shock.

Original languageEnglish
Pages (from-to)305-307
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume354
DOIs
Publication statusPublished - Jul 1 2015

Keywords

  • Boron-doped zinc oxide
  • Hydrogen outgassing
  • Solar cell
  • TCO layers

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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