Structural characterization of 3C-SiC grown using methyltrichlorosilane

Matteo Bosi, Giovanni Attolini, B. Pécz, Z. Zolnai, L. Dobos, Oscar Martínez, Liudi Jiang, Salim Taysir

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

3C-SiC layers were grown on Si substrates using standard precursors (SiH4 and C3H8) and by adding methyl trichloro silane (MTS) to the gas phase, with growth temperatures between 1200 and 1300 °C. Characterization of the 3C-SiC layers shows that 3C-SiC grown with MTS has higher polycrystalline and amorphous content as well as lower residual stress.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages291-294
Number of pages4
Volume740-742
DOIs
Publication statusPublished - 2013
Event9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 - St. Petersburg, Russian Federation
Duration: Sep 2 2012Sep 6 2012

Publication series

NameMaterials Science Forum
Volume740-742
ISSN (Print)02555476

Other

Other9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
CountryRussian Federation
CitySt. Petersburg
Period9/2/129/6/12

Fingerprint

Silanes
silanes
Growth temperature
residual stress
Residual stresses
Gases
vapor phases
Substrates
temperature
methyltrichlorosilane
trichloromethyl free radical

Keywords

  • Defects
  • Methyl trichloro silane
  • Polycrystal
  • SiC
  • Stress

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Bosi, M., Attolini, G., Pécz, B., Zolnai, Z., Dobos, L., Martínez, O., ... Taysir, S. (2013). Structural characterization of 3C-SiC grown using methyltrichlorosilane. In Materials Science Forum (Vol. 740-742, pp. 291-294). (Materials Science Forum; Vol. 740-742). https://doi.org/10.4028/www.scientific.net/MSF.740-742.291

Structural characterization of 3C-SiC grown using methyltrichlorosilane. / Bosi, Matteo; Attolini, Giovanni; Pécz, B.; Zolnai, Z.; Dobos, L.; Martínez, Oscar; Jiang, Liudi; Taysir, Salim.

Materials Science Forum. Vol. 740-742 2013. p. 291-294 (Materials Science Forum; Vol. 740-742).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bosi, M, Attolini, G, Pécz, B, Zolnai, Z, Dobos, L, Martínez, O, Jiang, L & Taysir, S 2013, Structural characterization of 3C-SiC grown using methyltrichlorosilane. in Materials Science Forum. vol. 740-742, Materials Science Forum, vol. 740-742, pp. 291-294, 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 9/2/12. https://doi.org/10.4028/www.scientific.net/MSF.740-742.291
Bosi M, Attolini G, Pécz B, Zolnai Z, Dobos L, Martínez O et al. Structural characterization of 3C-SiC grown using methyltrichlorosilane. In Materials Science Forum. Vol. 740-742. 2013. p. 291-294. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.740-742.291
Bosi, Matteo ; Attolini, Giovanni ; Pécz, B. ; Zolnai, Z. ; Dobos, L. ; Martínez, Oscar ; Jiang, Liudi ; Taysir, Salim. / Structural characterization of 3C-SiC grown using methyltrichlorosilane. Materials Science Forum. Vol. 740-742 2013. pp. 291-294 (Materials Science Forum).
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