Structural changes in amorphous Ge induced by Sb-implantation

E. Svab, F. Hajdu, G. Peto, L. Pusztai

Research output: Contribution to journalConference article

Abstract

X-ray diffraction measurements were carried out on amorphous germanium in as evaporated state and after Sb-ion implantation. Significant changes were detected between the structure factors of the two specimens. From the corresponding radial distribution functions 15 % increase of the atomic number density was established due to ion implantation. The first neighhour number is 3.6 atoms in the as evaporated state and 4.1 atoms after ion implantation. These results suggest that a more dense amorphous structure forms in consequence of ion bombardment.

Original languageEnglish
Pages (from-to)401-406
Number of pages6
JournalMaterials Science Forum
Volume166-169
Issue numberpt 2
DOIs
Publication statusPublished - 1994
EventProceedings of the 3rd European Powder Diffraction Conference. Part 2 (of 2) - Vienna, Austria
Duration: Sep 25 1993Sep 28 1993

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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