Structural and electrical properties of Ni films grown on Si(100) and SiO2 by d.c. bias sputtering

Hong Qiu, G. Sáfrán, B. Pécz, P. Barna, Akio Kosuge, Hisashi Nakai, Shigemi Yugo, Mituru Hashimoto

Research output: Contribution to journalArticle

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Abstract

Ni films are deposited on both pure and SiO2-covered Si(100) substrates at 190 °C by d.c. diode sputtering at 2.5 kV in pure Ar. A d.c. bias volatage Vs (0 to - 80 V) is applied on the substrates during the deposition. A study is made mainly of the effect of Vs on the structural and electrical properties of the films by reflection high energy electron diffraction, transmission electron microscopy and resistance measurements from 30 to 135 °C. Film-substrate interdiffusion is observed in Ni/Si but not in Ni/SiO2. Ni adatoms diffuse preferentially along Si(111) with the formation of Ni2Si in the Si crystal. The grain size and diffusion depth of the Ni film increase with Vs. A non-columnar structure with voids along the interface is induced by Ni diffusion into Si as Vs ranges from 0 to - 20 V in Ni/Si whereas a slightly inclined columnar structure is induced at Vs = -20 V in Ni/SiO2. Thick columns grow at Vs = -80 V in both systems. The temperature coefficient of resistance, η, is positive for both Ni/Si and Ni/SiO2. The dependences of η on Vs can be understood in terms of the above-mentioned structural changes with Vs.

Original languageEnglish
Pages (from-to)107-112
Number of pages6
JournalThin Solid Films
Volume229
Issue number1
DOIs
Publication statusPublished - Jun 5 1993

Fingerprint

Sputtering
Structural properties
Electric properties
sputtering
electrical properties
Substrates
Reflection high energy electron diffraction
Adatoms
high energy electrons
adatoms
voids
Diodes
electron diffraction
grain size
diodes
Transmission electron microscopy
transmission electron microscopy
Crystals
coefficients
crystals

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Structural and electrical properties of Ni films grown on Si(100) and SiO2 by d.c. bias sputtering. / Qiu, Hong; Sáfrán, G.; Pécz, B.; Barna, P.; Kosuge, Akio; Nakai, Hisashi; Yugo, Shigemi; Hashimoto, Mituru.

In: Thin Solid Films, Vol. 229, No. 1, 05.06.1993, p. 107-112.

Research output: Contribution to journalArticle

Qiu, Hong ; Sáfrán, G. ; Pécz, B. ; Barna, P. ; Kosuge, Akio ; Nakai, Hisashi ; Yugo, Shigemi ; Hashimoto, Mituru. / Structural and electrical properties of Ni films grown on Si(100) and SiO2 by d.c. bias sputtering. In: Thin Solid Films. 1993 ; Vol. 229, No. 1. pp. 107-112.
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