Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

L. Dobos, B. Pécz, L. Tóth, Zs J. Horváth, Z. E. Horváth, B. Beaumont, Z. Bougrioua

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Au and Ti/Au layers were deposited on n-GaN. The samples were annealed at 400, 700 and 900 °C for 10 min in vacuum. The contacts were rectifying up to 700 °C and the highest Schottky barrier height of 1.07 eV was obtained for an Au single layer by current-voltage measurements. A binary phase of Au2Ga was identified at the interface of the n-GaN/Ti/Au contact after annealing at 900 °C. The formation of Ti2N and TiN (twin) phases epitaxially grown on GaN was also observed in the same contact as well as some gold diffusion into the topmost region of the GaN epilayer.

Original languageEnglish
Pages (from-to)794-798
Number of pages5
JournalVacuum
Volume82
Issue number8
DOIs
Publication statusPublished - Apr 14 2008

Keywords

  • Electrical properties
  • Electron microscopy
  • GaN
  • Solid phase reaction
  • Thin films

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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