Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Emanuela Schilirò, Filippo Giannazzo, Corrado Bongiorno, Salvatore Di Franco, Giuseppe Greco, Fabrizio Roccaforte, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Marcin Krysko, Adrien Michon, Yvon Cordier, Ildiko Cora, B. Pécz, Hassan Gargouri, Raffaella Lo Nigro

Research output: Contribution to journalArticle

Abstract

Aluminum nitride (AlN) thin films have been deposited by Plasma Enhanced Atomic Layer Deposition (PE-ALD) onto GaN-Sapphire substrates. The morphological, structural and electrical properties of AlN films with different thickness (from 5 to 15 nm) have been investigated. They uniformly cover the underlying GaN substrate without pinholes and cracks. All the AlN thin films show c-axis orientation and their in-plane crystalline arrangement perfectly matches the hexagonal structure of GaN substrate. In particular, the cross-sectional TEM analysis demonstrated that the first AlN layers are well aligned with respect to the GaN (0001) substrate, while stacking faults formation is observed in the upper part of the films. Finally, electrical measurements by Hg-probe on as-deposited AlN showed very low current leakage across these layers and the presence of a high density two-dimensional electron gas (>2 × 10 13 cm −2 ) at the AlN/GaN interface.

Original languageEnglish
Pages (from-to)35-39
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume97
DOIs
Publication statusPublished - Jul 1 2019

Fingerprint

Aluminum nitride
Atomic layer deposition
aluminum nitrides
atomic layer epitaxy
Structural properties
Electric properties
electrical properties
Plasmas
Thin films
Substrates
thin films
Two dimensional electron gas
Aluminum Oxide
Stacking faults
pinholes
low currents
Sapphire
crystal defects
Leakage currents
Crystal orientation

Keywords

  • Aluminium nitride
  • Atomic layer deposition (ALD)
  • Epitaxial growth
  • Insulating thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition. / Schilirò, Emanuela; Giannazzo, Filippo; Bongiorno, Corrado; Di Franco, Salvatore; Greco, Giuseppe; Roccaforte, Fabrizio; Prystawko, Pawel; Kruszewski, Piotr; Leszczyński, Mike; Krysko, Marcin; Michon, Adrien; Cordier, Yvon; Cora, Ildiko; Pécz, B.; Gargouri, Hassan; Nigro, Raffaella Lo.

In: Materials Science in Semiconductor Processing, Vol. 97, 01.07.2019, p. 35-39.

Research output: Contribution to journalArticle

Schilirò, E, Giannazzo, F, Bongiorno, C, Di Franco, S, Greco, G, Roccaforte, F, Prystawko, P, Kruszewski, P, Leszczyński, M, Krysko, M, Michon, A, Cordier, Y, Cora, I, Pécz, B, Gargouri, H & Nigro, RL 2019, 'Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition', Materials Science in Semiconductor Processing, vol. 97, pp. 35-39. https://doi.org/10.1016/j.mssp.2019.03.005
Schilirò, Emanuela ; Giannazzo, Filippo ; Bongiorno, Corrado ; Di Franco, Salvatore ; Greco, Giuseppe ; Roccaforte, Fabrizio ; Prystawko, Pawel ; Kruszewski, Piotr ; Leszczyński, Mike ; Krysko, Marcin ; Michon, Adrien ; Cordier, Yvon ; Cora, Ildiko ; Pécz, B. ; Gargouri, Hassan ; Nigro, Raffaella Lo. / Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition. In: Materials Science in Semiconductor Processing. 2019 ; Vol. 97. pp. 35-39.
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AU - Greco, Giuseppe

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N2 - Aluminum nitride (AlN) thin films have been deposited by Plasma Enhanced Atomic Layer Deposition (PE-ALD) onto GaN-Sapphire substrates. The morphological, structural and electrical properties of AlN films with different thickness (from 5 to 15 nm) have been investigated. They uniformly cover the underlying GaN substrate without pinholes and cracks. All the AlN thin films show c-axis orientation and their in-plane crystalline arrangement perfectly matches the hexagonal structure of GaN substrate. In particular, the cross-sectional TEM analysis demonstrated that the first AlN layers are well aligned with respect to the GaN (0001) substrate, while stacking faults formation is observed in the upper part of the films. Finally, electrical measurements by Hg-probe on as-deposited AlN showed very low current leakage across these layers and the presence of a high density two-dimensional electron gas (>2 × 10 13 cm −2 ) at the AlN/GaN interface.

AB - Aluminum nitride (AlN) thin films have been deposited by Plasma Enhanced Atomic Layer Deposition (PE-ALD) onto GaN-Sapphire substrates. The morphological, structural and electrical properties of AlN films with different thickness (from 5 to 15 nm) have been investigated. They uniformly cover the underlying GaN substrate without pinholes and cracks. All the AlN thin films show c-axis orientation and their in-plane crystalline arrangement perfectly matches the hexagonal structure of GaN substrate. In particular, the cross-sectional TEM analysis demonstrated that the first AlN layers are well aligned with respect to the GaN (0001) substrate, while stacking faults formation is observed in the upper part of the films. Finally, electrical measurements by Hg-probe on as-deposited AlN showed very low current leakage across these layers and the presence of a high density two-dimensional electron gas (>2 × 10 13 cm −2 ) at the AlN/GaN interface.

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