Stress model for the wrinkling of ion-implanted layers

C. Hajdu, F. Pszti, I. Lovas, M. Fried

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A model is presented to describe the regular ripple patterns observed in several kinds of high-dose ion-implantation experiments. The model is based on elastic instability of the implanted layer, occurring when a critical value of the lateral stress is reached during ion implantation. The predicted wavelength of wrinkling is related to the width of the implanted-atom distribution, and it is in good agreement with experimental results.

Original languageEnglish
Pages (from-to)3920-3922
Number of pages3
JournalPhysical Review B
Volume41
Issue number7
DOIs
Publication statusPublished - Jan 1 1990

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Stress model for the wrinkling of ion-implanted layers'. Together they form a unique fingerprint.

  • Cite this