Schemes of switching memories based on magnetic tunnel junctions via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories without account of thermal fluctuations are performed and compared. We demonstrate that short-pulse precessional switching with perpendicularly polarized current requires a shorter time and smaller energy than switching with collinear in-plane spin polarization. We also show that memory cells based on precessional switching are superior to those in current technologies. We study the dependence of switching on the magnitude of current and pulse duration. An increased Gilbert damping is found to improve tolerances of perpendicular- polarization switching without increasing the threshold current, unlike in-plane switching.
ASJC Scopus subject areas
- Physics and Astronomy(all)