Strain relaxation induced by He-implantation at the Si1-xGex/Si(100) interface investigated by positron annihilation

L. Liszkay, Z. Kajcsos, M. F. Barthe, P. Desgardin, Th Hackbarth, H. J. Herzog, B. Holländer, S. Mantl

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Relaxation of 110 nm thick Si0.72Ge0.28 epitaxial layers grown on Si (100) substrate by molecular beam epitaxy have been studied by a variable energy slow positron beam. He-implantation at 18 keV energy and 2-3 × 1016ions cm-2 fluence and subsequent annealing has been used to create a defect zone with large cavities in the substrate, at approximately 180-240 nm from the surface, in order to enhance strain relaxation in the SiGe layer. Positrons detected a significant difference in the cavity profile between single implantations with 2 × 1016 and 3 × 1016ions cm-2 fluence. e+ trapping in the SiGe layer and at the interface was found to be below the limit of the resolution of the slow positron technique.

Original languageEnglish
Pages (from-to)136-139
Number of pages4
JournalApplied Surface Science
Volume194
Issue number1-4
DOIs
Publication statusPublished - Jun 21 2002

Fingerprint

Strain relaxation
Positron annihilation
Positrons
positron annihilation
positrons
implantation
fluence
cavities
Epitaxial layers
Substrates
Molecular beam epitaxy
molecular beam epitaxy
trapping
Annealing
Defects
annealing
energy
defects
profiles

Keywords

  • Bubble
  • Ion implantation
  • Positron annihilation
  • SiGe
  • Silicon

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Strain relaxation induced by He-implantation at the Si1-xGex/Si(100) interface investigated by positron annihilation. / Liszkay, L.; Kajcsos, Z.; Barthe, M. F.; Desgardin, P.; Hackbarth, Th; Herzog, H. J.; Holländer, B.; Mantl, S.

In: Applied Surface Science, Vol. 194, No. 1-4, 21.06.2002, p. 136-139.

Research output: Contribution to journalArticle

Liszkay, L, Kajcsos, Z, Barthe, MF, Desgardin, P, Hackbarth, T, Herzog, HJ, Holländer, B & Mantl, S 2002, 'Strain relaxation induced by He-implantation at the Si1-xGex/Si(100) interface investigated by positron annihilation', Applied Surface Science, vol. 194, no. 1-4, pp. 136-139. https://doi.org/10.1016/S0169-4332(02)00113-7
Liszkay, L. ; Kajcsos, Z. ; Barthe, M. F. ; Desgardin, P. ; Hackbarth, Th ; Herzog, H. J. ; Holländer, B. ; Mantl, S. / Strain relaxation induced by He-implantation at the Si1-xGex/Si(100) interface investigated by positron annihilation. In: Applied Surface Science. 2002 ; Vol. 194, No. 1-4. pp. 136-139.
@article{d62dd06dd62442bab98329b820125365,
title = "Strain relaxation induced by He-implantation at the Si1-xGex/Si(100) interface investigated by positron annihilation",
abstract = "Relaxation of 110 nm thick Si0.72Ge0.28 epitaxial layers grown on Si (100) substrate by molecular beam epitaxy have been studied by a variable energy slow positron beam. He-implantation at 18 keV energy and 2-3 × 1016ions cm-2 fluence and subsequent annealing has been used to create a defect zone with large cavities in the substrate, at approximately 180-240 nm from the surface, in order to enhance strain relaxation in the SiGe layer. Positrons detected a significant difference in the cavity profile between single implantations with 2 × 1016 and 3 × 1016ions cm-2 fluence. e+ trapping in the SiGe layer and at the interface was found to be below the limit of the resolution of the slow positron technique.",
keywords = "Bubble, Ion implantation, Positron annihilation, SiGe, Silicon",
author = "L. Liszkay and Z. Kajcsos and Barthe, {M. F.} and P. Desgardin and Th Hackbarth and Herzog, {H. J.} and B. Holl{\"a}nder and S. Mantl",
year = "2002",
month = "6",
day = "21",
doi = "10.1016/S0169-4332(02)00113-7",
language = "English",
volume = "194",
pages = "136--139",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Strain relaxation induced by He-implantation at the Si1-xGex/Si(100) interface investigated by positron annihilation

AU - Liszkay, L.

AU - Kajcsos, Z.

AU - Barthe, M. F.

AU - Desgardin, P.

AU - Hackbarth, Th

AU - Herzog, H. J.

AU - Holländer, B.

AU - Mantl, S.

PY - 2002/6/21

Y1 - 2002/6/21

N2 - Relaxation of 110 nm thick Si0.72Ge0.28 epitaxial layers grown on Si (100) substrate by molecular beam epitaxy have been studied by a variable energy slow positron beam. He-implantation at 18 keV energy and 2-3 × 1016ions cm-2 fluence and subsequent annealing has been used to create a defect zone with large cavities in the substrate, at approximately 180-240 nm from the surface, in order to enhance strain relaxation in the SiGe layer. Positrons detected a significant difference in the cavity profile between single implantations with 2 × 1016 and 3 × 1016ions cm-2 fluence. e+ trapping in the SiGe layer and at the interface was found to be below the limit of the resolution of the slow positron technique.

AB - Relaxation of 110 nm thick Si0.72Ge0.28 epitaxial layers grown on Si (100) substrate by molecular beam epitaxy have been studied by a variable energy slow positron beam. He-implantation at 18 keV energy and 2-3 × 1016ions cm-2 fluence and subsequent annealing has been used to create a defect zone with large cavities in the substrate, at approximately 180-240 nm from the surface, in order to enhance strain relaxation in the SiGe layer. Positrons detected a significant difference in the cavity profile between single implantations with 2 × 1016 and 3 × 1016ions cm-2 fluence. e+ trapping in the SiGe layer and at the interface was found to be below the limit of the resolution of the slow positron technique.

KW - Bubble

KW - Ion implantation

KW - Positron annihilation

KW - SiGe

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0037150951&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037150951&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(02)00113-7

DO - 10.1016/S0169-4332(02)00113-7

M3 - Article

AN - SCOPUS:0037150951

VL - 194

SP - 136

EP - 139

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -