Strain relaxation induced by He-implantation at the Si 1-x Ge x /Si(100) interface investigated by positron annihilation

L. Liszkay, Zs Kajcsos, M. F. Barthe, P. Desgardin, Th Hackbarth, H. J. Herzog, B. Holländer, S. Mantl

Research output: Contribution to journalConference article

3 Citations (Scopus)


Relaxation of 110 nm thick Si 0.72 Ge 0.28 epitaxial layers grown on Si (100) substrate by molecular beam epitaxy have been studied by a variable energy slow positron beam. He-implantation at 18 keV energy and 2-3 × 10 16 ions cm -2 fluence and subsequent annealing has been used to create a defect zone with large cavities in the substrate, at approximately 180-240 nm from the surface, in order to enhance strain relaxation in the SiGe layer. Positrons detected a significant difference in the cavity profile between single implantations with 2 × 10 16 and 3 × 10 16 ions cm -2 fluence. e + trapping in the SiGe layer and at the interface was found to be below the limit of the resolution of the slow positron technique.

Original languageEnglish
Pages (from-to)136-139
Number of pages4
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - Jun 21 2002
Event9th International Workshop on Slow Positron Beam Techniques - Dresden, Germany
Duration: Sep 16 2001Sep 22 2001


  • Bubble
  • Ion implantation
  • Positron annihilation
  • SiGe
  • Silicon

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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