Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers

F. Romanato, E. Napolitani, A. Carnera, A. V. Drigo, L. Lazzarini, G. Salviati, C. Ferrari, A. Bosacchi, S. Franchi

Research output: Contribution to journalArticle

84 Citations (Scopus)


A model to compute the strain relaxation rate in InxGa1-xAs/GaAs single layers has been tested on several compositionally graded buffer layers. The existence of a critical elastic energy has been assumed as a criterion for the generation of new misfit dislocations. The surface strain accuracy results are within 2.5×10-4. The influence of different grading laws and growth conditions on residual strain, threading dislocation density, misfit dislocation confinement, and surface morphology has been studied. The probability of dislocation interaction and work hardening has been shown to strongly influence the mobility and the generation rate of the dislocations. Optimization of the growth conditions removes residual strain asymmetries and smoothes the surface roughness.

Original languageEnglish
Pages (from-to)4748-4755
Number of pages8
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - Nov 1 1999

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Strain relaxation in graded composition In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs buffer layers'. Together they form a unique fingerprint.

  • Cite this

    Romanato, F., Napolitani, E., Carnera, A., Drigo, A. V., Lazzarini, L., Salviati, G., Ferrari, C., Bosacchi, A., & Franchi, S. (1999). Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers. Journal of Applied Physics, 86(9), 4748-4755.