Strain-free polarization superlattice in silicon carbide: A theoretical investigation

Peter Deák, Adam Buruzs, Adam Gali, Thomas Frauenheim

Research output: Contribution to journalArticle

16 Citations (Scopus)


A strain-free superlattice of inversion domains along the hexagonal axis of SiC is investigated by theoretical calculations. The induced polarization causes a zigzag shape in the band edges, leading to spatial separation of photoexcited carriers and to an effective band gap narrowing tunable over a wide range by the geometry and on a smaller scale by the intensity of the excitation. Calculations on the SiC surface indicate that preparation of such a superlattice might be possible in atomic layer epitaxy with properly chosen sources and temperatures.

Original languageEnglish
Article number236803
JournalPhysical review letters
Issue number23
Publication statusPublished - Jun 20 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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