Strain-free polarization superlattice in silicon carbide: A theoretical investigation

Peter Deák, Adam Buruzs, A. Gali, Thomas Frauenheim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A strain-free superlattice of inversion domains along the hexagonal axis of SiC is investigated by theoretical calculations. The induced polarization causes a zigzag shape in the band edges, leading to spatial separation of photoexcited carriers and to an effective band gap narrowing tunable over a wide range by the geometry and on a smaller scale by the intensity of the excitation. Calculations on the SiC surface indicate that preparation of such a superlattice might be possible in atomic layer epitaxy with properly chosen sources and temperatures.

Original languageEnglish
Article number236803
JournalPhysical Review Letters
Volume96
Issue number23
DOIs
Publication statusPublished - 2006

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silicon carbides
polarization
leading edges
atomic layer epitaxy
inversions
preparation
causes
geometry
excitation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Strain-free polarization superlattice in silicon carbide : A theoretical investigation. / Deák, Peter; Buruzs, Adam; Gali, A.; Frauenheim, Thomas.

In: Physical Review Letters, Vol. 96, No. 23, 236803, 2006.

Research output: Contribution to journalArticle

Deák, Peter ; Buruzs, Adam ; Gali, A. ; Frauenheim, Thomas. / Strain-free polarization superlattice in silicon carbide : A theoretical investigation. In: Physical Review Letters. 2006 ; Vol. 96, No. 23.
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