Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart, B. Beaumont

Research output: Contribution to journalArticle

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Abstract

The growth process of crack-free bulk-like GaN obtained by hydride-vapor-phase-epitaxy (HVPE) growth on two-step epitaxial lateral overgrown GaN template on sapphire was analyzed. The as-grown 270-μm-thick GaN layer was self-separated from sapphire substrate during cooling down stage. The dislocation density of free-standing HVPE-GaN was found to be ∼2.5×107 cm-2 on Ga-polar face using plan-view transmission electron microscopy. The results show that free-standing bulk-like HVPE-GaN serve as a lattice- and thermal-expansion-coefficient matched substrate for growth of high-quality III-nitride heterostructures.

Original languageEnglish
Pages (from-to)799-806
Number of pages8
JournalJournal of Applied Physics
Volume96
Issue number1
DOIs
Publication statusPublished - Jul 1 2004

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vapor phase epitaxy
hydrides
templates
sapphire
nitrides
thermal expansion
cracks
cooling
transmission electron microscopy
coefficients

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Gogova, D., Kasic, A., Larsson, H., Hemmingsson, C., Monemar, B., Tuomisto, F., ... Beaumont, B. (2004). Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template. Journal of Applied Physics, 96(1), 799-806. https://doi.org/10.1063/1.1753073

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template. / Gogova, D.; Kasic, A.; Larsson, H.; Hemmingsson, C.; Monemar, B.; Tuomisto, F.; Saarinen, K.; Dobos, L.; Pécz, B.; Gibart, P.; Beaumont, B.

In: Journal of Applied Physics, Vol. 96, No. 1, 01.07.2004, p. 799-806.

Research output: Contribution to journalArticle

Gogova, D, Kasic, A, Larsson, H, Hemmingsson, C, Monemar, B, Tuomisto, F, Saarinen, K, Dobos, L, Pécz, B, Gibart, P & Beaumont, B 2004, 'Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template', Journal of Applied Physics, vol. 96, no. 1, pp. 799-806. https://doi.org/10.1063/1.1753073
Gogova, D. ; Kasic, A. ; Larsson, H. ; Hemmingsson, C. ; Monemar, B. ; Tuomisto, F. ; Saarinen, K. ; Dobos, L. ; Pécz, B. ; Gibart, P. ; Beaumont, B. / Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template. In: Journal of Applied Physics. 2004 ; Vol. 96, No. 1. pp. 799-806.
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AU - Larsson, H.

AU - Hemmingsson, C.

AU - Monemar, B.

AU - Tuomisto, F.

AU - Saarinen, K.

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AU - Gibart, P.

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