Strain distribution in As+ and Sb+ ion implanted and annealed 〈100〉 Si

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Abstract

Si 〈100〉 wafers were implanted with a dose of 4×1015 cm-2 with 40 keV and 72 keV As+ and Sb+, respectively. Samples were isochronally annealed at 600, 700 and 800°C for 30 min. Characterization of the samples was made by double crystal X-ray diffractometry (DCD) and cross-sectional transmission electron microscopy (XTEM). Lattice strain depth profiles were determined from simulation of the X-ray rocking curves by a semikinematical model and were compared to XTEM observations. For arsenic it was found that the well-known positive strain arising from the dislocation loops at the earlier amorphous/crystalline interface increased with increasing annealing temperature. No significant change was found for antimony. The effect of larger ion size of Sb is confirmed by a positively strained layer at about half the depth of the regrown layer with roughly the same distribution as the distribution of the implanted antimony. In case of As, only a very small strain was observed at about the depth of the impurity concentration maximum. The strain distributions obtained from the rocking curve analysis were in good agreement with the XTEM observations.

Original languageEnglish
Pages (from-to)552-555
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume80-81
Issue numberPART 1
DOIs
Publication statusPublished - Jun 3 1993

Fingerprint

strain distribution
Antimony
Ions
antimony
ions
Arsenic
curves
Dislocations (crystals)
Heavy ions
arsenic
X ray diffraction analysis
x rays
wafers
Annealing
Impurities
Crystalline materials
Transmission electron microscopy
X rays
impurities
dosage

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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title = "Strain distribution in As+ and Sb+ ion implanted and annealed 〈100〉 Si",
abstract = "Si 〈100〉 wafers were implanted with a dose of 4×1015 cm-2 with 40 keV and 72 keV As+ and Sb+, respectively. Samples were isochronally annealed at 600, 700 and 800°C for 30 min. Characterization of the samples was made by double crystal X-ray diffractometry (DCD) and cross-sectional transmission electron microscopy (XTEM). Lattice strain depth profiles were determined from simulation of the X-ray rocking curves by a semikinematical model and were compared to XTEM observations. For arsenic it was found that the well-known positive strain arising from the dislocation loops at the earlier amorphous/crystalline interface increased with increasing annealing temperature. No significant change was found for antimony. The effect of larger ion size of Sb is confirmed by a positively strained layer at about half the depth of the regrown layer with roughly the same distribution as the distribution of the implanted antimony. In case of As, only a very small strain was observed at about the depth of the impurity concentration maximum. The strain distributions obtained from the rocking curve analysis were in good agreement with the XTEM observations.",
author = "Z. Horv{\'a}th and G. Pető and Eva Zsoldos and J. Gyulai",
year = "1993",
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T1 - Strain distribution in As+ and Sb+ ion implanted and annealed 〈100〉 Si

AU - Horváth, Z.

AU - Pető, G.

AU - Zsoldos, Eva

AU - Gyulai, J.

PY - 1993/6/3

Y1 - 1993/6/3

N2 - Si 〈100〉 wafers were implanted with a dose of 4×1015 cm-2 with 40 keV and 72 keV As+ and Sb+, respectively. Samples were isochronally annealed at 600, 700 and 800°C for 30 min. Characterization of the samples was made by double crystal X-ray diffractometry (DCD) and cross-sectional transmission electron microscopy (XTEM). Lattice strain depth profiles were determined from simulation of the X-ray rocking curves by a semikinematical model and were compared to XTEM observations. For arsenic it was found that the well-known positive strain arising from the dislocation loops at the earlier amorphous/crystalline interface increased with increasing annealing temperature. No significant change was found for antimony. The effect of larger ion size of Sb is confirmed by a positively strained layer at about half the depth of the regrown layer with roughly the same distribution as the distribution of the implanted antimony. In case of As, only a very small strain was observed at about the depth of the impurity concentration maximum. The strain distributions obtained from the rocking curve analysis were in good agreement with the XTEM observations.

AB - Si 〈100〉 wafers were implanted with a dose of 4×1015 cm-2 with 40 keV and 72 keV As+ and Sb+, respectively. Samples were isochronally annealed at 600, 700 and 800°C for 30 min. Characterization of the samples was made by double crystal X-ray diffractometry (DCD) and cross-sectional transmission electron microscopy (XTEM). Lattice strain depth profiles were determined from simulation of the X-ray rocking curves by a semikinematical model and were compared to XTEM observations. For arsenic it was found that the well-known positive strain arising from the dislocation loops at the earlier amorphous/crystalline interface increased with increasing annealing temperature. No significant change was found for antimony. The effect of larger ion size of Sb is confirmed by a positively strained layer at about half the depth of the regrown layer with roughly the same distribution as the distribution of the implanted antimony. In case of As, only a very small strain was observed at about the depth of the impurity concentration maximum. The strain distributions obtained from the rocking curve analysis were in good agreement with the XTEM observations.

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