STM study of the MoS2 flakes grown on graphite

A model system for atomically clean 2D heterostructure interfaces

Antal A. Koós, Péter Vancsó, Gábor Z. Magda, Z. Osváth, K. Kertész, Gergely Dobrik, Chanyong Hwang, L. Tapasztó, L. Bíró

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Heterostructures of 2D materials are expected to become building blocks of next generation nanoelectronic devices. Therefore, the detailed understanding of their interfaces is of particular importance. In order to gain information on the properties of the graphene - MoS2 system, we have investigated MoS2 sheets grown by chemical vapour deposition (CVD) on highly ordered pyrolytic graphite (HOPG) as a model system with atomically clean interface. The results are compared with results reported recently for MoS2 grown on epitaxial graphene on SiC. Our STM study revealed that the crystallographic orientation of MoS2 sheets is determined by the orientation of the underlying graphite lattice. This epitaxial orientation preference is so strong that the MoS2 flakes could be moved on HOPG with the STM tip over large distances without rotation. The electronic properties of the MoS2 flakes have been investigated using tunneling spectroscopy. A significant modification of the electronic structure has been revealed at flake edges and grain boundaries. These features are expected to have an important influence on the performance of nanoelectronic devices. We have also demonstrated the ability of the STM to define MoS2 nanoribbons down to 12 nm width, which can be used as building blocks for future nanoelectronic devices.

Original languageEnglish
Pages (from-to)408-415
Number of pages8
JournalCarbon
Volume105
DOIs
Publication statusPublished - Aug 1 2016

Fingerprint

Nanoelectronics
Graphite
Heterojunctions
Graphene
Nanoribbons
Electronic properties
Electronic structure
Chemical vapor deposition
Grain boundaries
Carbon Nanotubes
Spectroscopy

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

STM study of the MoS2 flakes grown on graphite : A model system for atomically clean 2D heterostructure interfaces. / Koós, Antal A.; Vancsó, Péter; Magda, Gábor Z.; Osváth, Z.; Kertész, K.; Dobrik, Gergely; Hwang, Chanyong; Tapasztó, L.; Bíró, L.

In: Carbon, Vol. 105, 01.08.2016, p. 408-415.

Research output: Contribution to journalArticle

Koós, Antal A. ; Vancsó, Péter ; Magda, Gábor Z. ; Osváth, Z. ; Kertész, K. ; Dobrik, Gergely ; Hwang, Chanyong ; Tapasztó, L. ; Bíró, L. / STM study of the MoS2 flakes grown on graphite : A model system for atomically clean 2D heterostructure interfaces. In: Carbon. 2016 ; Vol. 105. pp. 408-415.
@article{4bdc75e3e61c48969627dd55005da7d2,
title = "STM study of the MoS2 flakes grown on graphite: A model system for atomically clean 2D heterostructure interfaces",
abstract = "Heterostructures of 2D materials are expected to become building blocks of next generation nanoelectronic devices. Therefore, the detailed understanding of their interfaces is of particular importance. In order to gain information on the properties of the graphene - MoS2 system, we have investigated MoS2 sheets grown by chemical vapour deposition (CVD) on highly ordered pyrolytic graphite (HOPG) as a model system with atomically clean interface. The results are compared with results reported recently for MoS2 grown on epitaxial graphene on SiC. Our STM study revealed that the crystallographic orientation of MoS2 sheets is determined by the orientation of the underlying graphite lattice. This epitaxial orientation preference is so strong that the MoS2 flakes could be moved on HOPG with the STM tip over large distances without rotation. The electronic properties of the MoS2 flakes have been investigated using tunneling spectroscopy. A significant modification of the electronic structure has been revealed at flake edges and grain boundaries. These features are expected to have an important influence on the performance of nanoelectronic devices. We have also demonstrated the ability of the STM to define MoS2 nanoribbons down to 12 nm width, which can be used as building blocks for future nanoelectronic devices.",
author = "Ko{\'o}s, {Antal A.} and P{\'e}ter Vancs{\'o} and Magda, {G{\'a}bor Z.} and Z. Osv{\'a}th and K. Kert{\'e}sz and Gergely Dobrik and Chanyong Hwang and L. Tapaszt{\'o} and L. B{\'i}r{\'o}",
year = "2016",
month = "8",
day = "1",
doi = "10.1016/j.carbon.2016.04.069",
language = "English",
volume = "105",
pages = "408--415",
journal = "Carbon",
issn = "0008-6223",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - STM study of the MoS2 flakes grown on graphite

T2 - A model system for atomically clean 2D heterostructure interfaces

AU - Koós, Antal A.

AU - Vancsó, Péter

AU - Magda, Gábor Z.

AU - Osváth, Z.

AU - Kertész, K.

AU - Dobrik, Gergely

AU - Hwang, Chanyong

AU - Tapasztó, L.

AU - Bíró, L.

PY - 2016/8/1

Y1 - 2016/8/1

N2 - Heterostructures of 2D materials are expected to become building blocks of next generation nanoelectronic devices. Therefore, the detailed understanding of their interfaces is of particular importance. In order to gain information on the properties of the graphene - MoS2 system, we have investigated MoS2 sheets grown by chemical vapour deposition (CVD) on highly ordered pyrolytic graphite (HOPG) as a model system with atomically clean interface. The results are compared with results reported recently for MoS2 grown on epitaxial graphene on SiC. Our STM study revealed that the crystallographic orientation of MoS2 sheets is determined by the orientation of the underlying graphite lattice. This epitaxial orientation preference is so strong that the MoS2 flakes could be moved on HOPG with the STM tip over large distances without rotation. The electronic properties of the MoS2 flakes have been investigated using tunneling spectroscopy. A significant modification of the electronic structure has been revealed at flake edges and grain boundaries. These features are expected to have an important influence on the performance of nanoelectronic devices. We have also demonstrated the ability of the STM to define MoS2 nanoribbons down to 12 nm width, which can be used as building blocks for future nanoelectronic devices.

AB - Heterostructures of 2D materials are expected to become building blocks of next generation nanoelectronic devices. Therefore, the detailed understanding of their interfaces is of particular importance. In order to gain information on the properties of the graphene - MoS2 system, we have investigated MoS2 sheets grown by chemical vapour deposition (CVD) on highly ordered pyrolytic graphite (HOPG) as a model system with atomically clean interface. The results are compared with results reported recently for MoS2 grown on epitaxial graphene on SiC. Our STM study revealed that the crystallographic orientation of MoS2 sheets is determined by the orientation of the underlying graphite lattice. This epitaxial orientation preference is so strong that the MoS2 flakes could be moved on HOPG with the STM tip over large distances without rotation. The electronic properties of the MoS2 flakes have been investigated using tunneling spectroscopy. A significant modification of the electronic structure has been revealed at flake edges and grain boundaries. These features are expected to have an important influence on the performance of nanoelectronic devices. We have also demonstrated the ability of the STM to define MoS2 nanoribbons down to 12 nm width, which can be used as building blocks for future nanoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=84965060798&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84965060798&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2016.04.069

DO - 10.1016/j.carbon.2016.04.069

M3 - Article

VL - 105

SP - 408

EP - 415

JO - Carbon

JF - Carbon

SN - 0008-6223

ER -