Static dielectric constant of disordered organic quasi one-dimensional conductors: Localization by defects

A. Jánossy, K. Holczer, P. L. Hsieh, C. M. Jackson, A. Zettl

Research output: Contribution to journalArticle

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Abstract

We have measured the low temperature dielectric constant ε{lunate} of two similar quasi one-dimensional organic conductors, N-Me-iso Qn(TCNQ)2 and Qn(TCNQ)2. For N-Me-iso Qn(TCNQ)2 below 10 K, ε{lunate} is independent of temperature and is frequency independent in the range 5 × 105 Hz to 9 × 109 Hz, within the 50% experimental uncertainty. Thus we believe the low temperature microwave dielectric constant to be a good approximation of the static value in this salt. For Qn(TCNQ)2 at low temperatures, the relation ε{lunate} ∝ (c+c0)-2 holds, where c is the defect concentration and c0 is an effective defect concentration of the nominally pure material. This relation is predicted by the model of interrupted metallic strands with energy spacings larger than kT, and it indicates that electrons are strongly localized by defects along the conducting chains.

Original languageEnglish
Pages (from-to)507-510
Number of pages4
JournalSolid State Communications
Volume43
Issue number7
DOIs
Publication statusPublished - 1982

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Permittivity
conductors
permittivity
Defects
defects
Organic conductors
strands
Temperature
spacing
salts
microwaves
conduction
Salts
Microwaves
approximation
tetracyanoquinodimethane
Electrons
electrons
temperature
energy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Static dielectric constant of disordered organic quasi one-dimensional conductors : Localization by defects. / Jánossy, A.; Holczer, K.; Hsieh, P. L.; Jackson, C. M.; Zettl, A.

In: Solid State Communications, Vol. 43, No. 7, 1982, p. 507-510.

Research output: Contribution to journalArticle

Jánossy, A. ; Holczer, K. ; Hsieh, P. L. ; Jackson, C. M. ; Zettl, A. / Static dielectric constant of disordered organic quasi one-dimensional conductors : Localization by defects. In: Solid State Communications. 1982 ; Vol. 43, No. 7. pp. 507-510.
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AU - Zettl, A.

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