Stabilization of point-defect spin qubits by quantum wells

Viktor Ivády, Joel Davidsson, Nazar Delegan, Abram L. Falk, Paul V. Klimov, Samuel J. Whiteley, Stephan O. Hruszkewycz, Martin V. Holt, F. Joseph Heremans, Nguyen Tien Son, David D. Awschalom, Igor A. Abrikosov, Adam Gali

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Abstract

Defect-based quantum systems in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron X-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide as a near-stacking fault axial divacancy and show how this model explains these defects’ robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits.

Original languageEnglish
Article number5607
JournalNature communications
Volume10
Issue number1
DOIs
Publication statusPublished - Dec 1 2019

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ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Ivády, V., Davidsson, J., Delegan, N., Falk, A. L., Klimov, P. V., Whiteley, S. J., Hruszkewycz, S. O., Holt, M. V., Heremans, F. J., Son, N. T., Awschalom, D. D., Abrikosov, I. A., & Gali, A. (2019). Stabilization of point-defect spin qubits by quantum wells. Nature communications, 10(1), [5607]. https://doi.org/10.1038/s41467-019-13495-6