Sputtering of SiC with low energy He and Ar ions under grazing incidence

R. Kosiba, G. Ecke, O. Ambacher, M. Menyhárd

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effect of low energy sputtering under grazing incidence upon the surface composition of SiC was investigated by Auger electron spectroscopy. The energy of the sputtering projectiles (He, Ar) varied from 200 to 1500 eV. Peak shifts to the higher energies with increasing argon ion energy were observed for all silicon and carbon Auger transitions. These shifts were explained by enhanced damage of the surface region within the sampling depth of the Auger electrons. The insensitivity of the Auger peak position to the energy of helium ions indicates that the damage state in the surface region does not change with the increasing energy of helium ions. An increase of the carbon concentration with the decrease of the argon energy was observed. The experiments were accompanied by dynamic Monte Carlo simulations by the TRIDYN code.

Original languageEnglish
Pages (from-to)721-730
Number of pages10
JournalRadiation Effects and Defects in Solids
Volume158
Issue number10
DOIs
Publication statusPublished - 2003

Fingerprint

grazing incidence
Sputtering
Helium
Argon
sputtering
Ions
Carbon
ions
Silicon
Auger electron spectroscopy
Projectiles
helium ions
Surface structure
energy
Sampling
argon
Electrons
damage
carbon
shift

Keywords

  • Auger electron spectroscopy
  • Ion-solid interactions
  • Silicon carbide

ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Radiation
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Sputtering of SiC with low energy He and Ar ions under grazing incidence. / Kosiba, R.; Ecke, G.; Ambacher, O.; Menyhárd, M.

In: Radiation Effects and Defects in Solids, Vol. 158, No. 10, 2003, p. 721-730.

Research output: Contribution to journalArticle

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