Spin Rotation of Negative Muons (μSR) in Semiconductors

Th Stammler, R. Abela, Th Grund, M. Hampele, D. Herlach, M. Iwanowski, M. Koch, K. Maier, J. Major, R. Scheuermann, L. Schimmele, A. Seeger

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Abstract

μ S̊ (spin rotation of negative muons) experiments on the elemental semiconductors diamond, silicon, and germanium are reported. The muonic atoms formed by the capture of μ by host atoms of nuclear charge number Z are electronically equivalent to acceptor atoms of charge number Z — 1. The observations suggest that the γ‐recoil accompanying the 2p‐1s transition of captured muons leaves the quasi‐boron atoms in diamond at their lattice sites, but displaces the quasi‐Al (quasi‐Ga) atoms in Si (Ge) into interstitial sites. It is concluded that on the time scale of the μ experiments (10−9 to 10−6 s) the Frenkel pairs formed in Si in this way are unstable above 30 K. This explains why in Si a μ hyperfine precession frequency has not been observed at room temperature.

Original languageEnglish
Pages (from-to)381-388
Number of pages8
Journalphysica status solidi (a)
Volume137
Issue number2
DOIs
Publication statusPublished - Jun 16 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Stammler, T., Abela, R., Grund, T., Hampele, M., Herlach, D., Iwanowski, M., Koch, M., Maier, K., Major, J., Scheuermann, R., Schimmele, L., & Seeger, A. (1993). Spin Rotation of Negative Muons (μSR) in Semiconductors. physica status solidi (a), 137(2), 381-388. https://doi.org/10.1002/pssa.2211370210