Spin gain transistor in ferromagnetic semiconductors - The semiconductor bloch-equations approach

Dmitri E. Nikonov, G. Bourianoff

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

A scheme and principle of operation of a "spin gain transistor" are proposed. A large unmagnetized current creates the carrier density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization. Large magnetized current is then extracted. Thus, spin gain of >1000 is predicted. Collective dynamics of spins under Coulomb exchange interaction is described via semiconductor Bloch equations.

Original languageEnglish
Pages (from-to)206-214
Number of pages9
JournalIEEE Transactions on Nanotechnology
Volume4
Issue number2
DOIs
Publication statusPublished - Mar 2005

Fingerprint

Exchange interactions
Carrier concentration
Magnetization
Transistors
Semiconductor materials

Keywords

  • Ferromagnetic materials
  • Magnetic resonance
  • Quantum theory
  • Semiconductor
  • Spintronics
  • Transistor

ASJC Scopus subject areas

  • Engineering(all)
  • Hardware and Architecture

Cite this

Spin gain transistor in ferromagnetic semiconductors - The semiconductor bloch-equations approach. / Nikonov, Dmitri E.; Bourianoff, G.

In: IEEE Transactions on Nanotechnology, Vol. 4, No. 2, 03.2005, p. 206-214.

Research output: Contribution to journalArticle

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