Spin and photophysics of carbon-antisite vacancy defect in 4H silicon carbide: A potential quantum bit

Krisztián Szász, Viktor Ivády, Igor A. Abrikosov, Erik Janzén, Michel Bockstedte, A. Gali

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Silicon carbide with engineered point defects is considered as very promising material for the next generation devices, with applications ranging from electronics and photonics to quantum computing. In this context, we investigate the spin physics of the carbon antisite-vacancy pair that in its positive charge state enables a single photon source. We find by hybrid density functional theory and many-body perturbation theory that the neutral defect possesses a high spin ground state in 4H silicon carbide and provide spin-resonance signatures for its experimental identification. Our results indicate the possibility for the coherent manipulation of the electron spin by optical excitation of this defect at telecom wavelengths, and suggest the defect as a candidate for an alternative solid state quantum bit.

Original languageEnglish
Article number121201
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number12
DOIs
Publication statusPublished - Mar 16 2015

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Silicon carbide
silicon carbides
Vacancies
Carbon
Defects
carbon
defects
spin resonance
Photoexcitation
Point defects
quantum computation
electron spin
Photonics
point defects
Ground state
Density functional theory
manipulators
Electronic equipment
Photons
Physics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Spin and photophysics of carbon-antisite vacancy defect in 4H silicon carbide : A potential quantum bit. / Szász, Krisztián; Ivády, Viktor; Abrikosov, Igor A.; Janzén, Erik; Bockstedte, Michel; Gali, A.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, No. 12, 121201, 16.03.2015.

Research output: Contribution to journalArticle

Szász, Krisztián ; Ivády, Viktor ; Abrikosov, Igor A. ; Janzén, Erik ; Bockstedte, Michel ; Gali, A. / Spin and photophysics of carbon-antisite vacancy defect in 4H silicon carbide : A potential quantum bit. In: Physical Review B - Condensed Matter and Materials Physics. 2015 ; Vol. 91, No. 12.
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