Spectroscopic ellipsometry applied to the determination of an ion implantation depth profile

Pierre Boher, Jean Louis Stehle, Jean Philippe Piel, M. Fried, T. Lohner, O. Polgar, N. Q. Khanh, I. Bársony

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Spectroscopic ellipsometry (SE) has been used to characterise damage depth profiles in silicon. The damage was produced by implantation of high energy ions of various atomic number with variable charge state and using various energies. The effect of substrate temperature was also investigated. In all cases a first characterisation was made using Rutherford backscattering experiments. Attempts were then made to extract accurate data from SE measurements. If the damage depth profile is thin (<200 nm), a simulation of SE in the range 0.25-0.82 μm using mixed materials and a simple or complex depth profile can give very accurate information. When the damage profile is thick enough (> 200 nm), an extended measurement in the near infrared (0.25-1.5 μm) gives direct information on the thickness of the damaged layer. In this latter case, data reduction is performed using Forouhi-Bloomer dispersion relations for the amorphized silicon layer.

Original languageEnglish
Pages (from-to)160-168
Number of pages9
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume112
Issue number1-4
Publication statusPublished - May 1996

Fingerprint

Spectroscopic ellipsometry
Silicon
Ion implantation
ellipsometry
ion implantation
damage
Rutherford backscattering spectroscopy
profiles
Data reduction
data reduction
silicon
Ions
Infrared radiation
implantation
backscattering
Substrates
energy
Experiments
Temperature
ions

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Spectroscopic ellipsometry applied to the determination of an ion implantation depth profile. / Boher, Pierre; Stehle, Jean Louis; Piel, Jean Philippe; Fried, M.; Lohner, T.; Polgar, O.; Khanh, N. Q.; Bársony, I.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 112, No. 1-4, 05.1996, p. 160-168.

Research output: Contribution to journalArticle

@article{644426c490ab4a4092b8e895f6fe0d5e,
title = "Spectroscopic ellipsometry applied to the determination of an ion implantation depth profile",
abstract = "Spectroscopic ellipsometry (SE) has been used to characterise damage depth profiles in silicon. The damage was produced by implantation of high energy ions of various atomic number with variable charge state and using various energies. The effect of substrate temperature was also investigated. In all cases a first characterisation was made using Rutherford backscattering experiments. Attempts were then made to extract accurate data from SE measurements. If the damage depth profile is thin (<200 nm), a simulation of SE in the range 0.25-0.82 μm using mixed materials and a simple or complex depth profile can give very accurate information. When the damage profile is thick enough (> 200 nm), an extended measurement in the near infrared (0.25-1.5 μm) gives direct information on the thickness of the damaged layer. In this latter case, data reduction is performed using Forouhi-Bloomer dispersion relations for the amorphized silicon layer.",
author = "Pierre Boher and Stehle, {Jean Louis} and Piel, {Jean Philippe} and M. Fried and T. Lohner and O. Polgar and Khanh, {N. Q.} and I. B{\'a}rsony",
year = "1996",
month = "5",
language = "English",
volume = "112",
pages = "160--168",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Spectroscopic ellipsometry applied to the determination of an ion implantation depth profile

AU - Boher, Pierre

AU - Stehle, Jean Louis

AU - Piel, Jean Philippe

AU - Fried, M.

AU - Lohner, T.

AU - Polgar, O.

AU - Khanh, N. Q.

AU - Bársony, I.

PY - 1996/5

Y1 - 1996/5

N2 - Spectroscopic ellipsometry (SE) has been used to characterise damage depth profiles in silicon. The damage was produced by implantation of high energy ions of various atomic number with variable charge state and using various energies. The effect of substrate temperature was also investigated. In all cases a first characterisation was made using Rutherford backscattering experiments. Attempts were then made to extract accurate data from SE measurements. If the damage depth profile is thin (<200 nm), a simulation of SE in the range 0.25-0.82 μm using mixed materials and a simple or complex depth profile can give very accurate information. When the damage profile is thick enough (> 200 nm), an extended measurement in the near infrared (0.25-1.5 μm) gives direct information on the thickness of the damaged layer. In this latter case, data reduction is performed using Forouhi-Bloomer dispersion relations for the amorphized silicon layer.

AB - Spectroscopic ellipsometry (SE) has been used to characterise damage depth profiles in silicon. The damage was produced by implantation of high energy ions of various atomic number with variable charge state and using various energies. The effect of substrate temperature was also investigated. In all cases a first characterisation was made using Rutherford backscattering experiments. Attempts were then made to extract accurate data from SE measurements. If the damage depth profile is thin (<200 nm), a simulation of SE in the range 0.25-0.82 μm using mixed materials and a simple or complex depth profile can give very accurate information. When the damage profile is thick enough (> 200 nm), an extended measurement in the near infrared (0.25-1.5 μm) gives direct information on the thickness of the damaged layer. In this latter case, data reduction is performed using Forouhi-Bloomer dispersion relations for the amorphized silicon layer.

UR - http://www.scopus.com/inward/record.url?scp=0030563230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030563230&partnerID=8YFLogxK

M3 - Article

VL - 112

SP - 160

EP - 168

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -