Spectroscopic ellipsometric study of LPCVD-deposited Si nanocrystals in SiNx and Si3N4

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-pressure chemical vapour deposited and annealed SiNx/nc-Si/ SiNx and Si3N4/nc-Si/Si3N 4 layers prepared on Si substrates were characterized by spectroscopic ellipsometry. The effective medium approximation model was used to obtain the thickness, the composition and homogeneity of the layers. It was obtained that the deposited nc-Si layer thickness depended on the stoichiometry of the underlying silicon nitride layer.

Original languageEnglish
Title of host publicationConference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
Pages87-89
Number of pages3
DOIs
Publication statusPublished - Dec 1 2006
Event6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06 - Smolenice Castle, Slovakia
Duration: Oct 16 2006Oct 18 2006

Publication series

NameConference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06

Other

Other6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
CountrySlovakia
CitySmolenice Castle
Period10/16/0610/18/06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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  • Cite this

    Basa, P., Petrik, P., & Fried, M. (2006). Spectroscopic ellipsometric study of LPCVD-deposited Si nanocrystals in SiNx and Si3N4. In Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06 (pp. 87-89). [4133084] (Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06). https://doi.org/10.1109/ASDAM.2006.331160