Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

T. Lohner, Miklós Serényi, Edit Szilágyi, Zsolt Zolnai, Zsolt Czigány, Nguyen Quoc Khánh, P. Petrik, M. Fried

Research output: Contribution to journalArticle

Abstract

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Original languageEnglish
JournalApplied Surface Science
DOIs
Publication statusAccepted/In press - Jul 29 2016

Fingerprint

Niobium oxide
Silicon
Sputtering
Substrates
Crystalline materials
Spectroscopic ellipsometry
Silicon oxides
Argon
Rutherford backscattering spectroscopy
Gas mixtures
Ion implantation
Ion beams
Surface roughness
Metals
Oxygen
Transmission electron microscopy

Keywords

  • Damage
  • Electron microscopy
  • Ellipsometry
  • Rutherford backscattering
  • Sputtering

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide. / Lohner, T.; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, P.; Fried, M.

In: Applied Surface Science, 29.07.2016.

Research output: Contribution to journalArticle

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