Spectroellipsometric characterization of ion implanted semiconductors and porous silicon

T. Lohner, N. Q. Khánh, Z. Zolnai

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In the past years spectroscopic ellipsometry (SE) was applied to materials science problems as an optical technique for non destructive depth profiling and characterization of multilayer structures and interfaces with considerable success. The measured optical response of the multicomponent and/or multilayer structure under investigation can only be related to actual material properties by a model calculation. The successful application of ellipsometry is not only determined by the quality of the measurements, but more importantly by the quality of the optical model. Several examples for the different application of SE are reviewed. Two recent examples of multilayer analysis illustrate possibilities: in the first example damage created by ion implantation in single-crystalline silicon and in silicon carbide was characterized using ellipsometry and Rutherford Backscattering Spectrometry (RBS) in combination with channeling. In the second example electrochemically prepared porous silicon layers (PSL) were investigated by SE.

Original languageEnglish
Pages (from-to)441-450
Number of pages10
JournalActa Physica Slovaca
Volume48
Issue number4
Publication statusPublished - Aug 1998

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porous silicon
ellipsometry
silicon
ions
laminates
materials science
silicon carbides
ion implantation
backscattering
damage
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Spectroellipsometric characterization of ion implanted semiconductors and porous silicon. / Lohner, T.; Khánh, N. Q.; Zolnai, Z.

In: Acta Physica Slovaca, Vol. 48, No. 4, 08.1998, p. 441-450.

Research output: Contribution to journalArticle

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