Some remarks to the nanowires grown on III-V substrate

Ákos Nemcsics, Eniko Horváth, Szilvia Nagy, László Milán Molnár, Imre Mojzes, Zsolt J. Horváth

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In the present work nanowires are investigated, which were prepared with the help of encapsulated metal induced growth method on GaAs and InP substrate. As our former investigations how, we can receive nanowires with substrate-like composition in the case of InP. In the case of GaAs substrate the situation is entirely different, while the growth technology in both cases was the same. The difference between the nanoproducts in the cases of different substrates originate in the reactivity of the components, which is explained in the following considerations. Furthermore we have observed that the diameter of the nanowires depends on the electron energy of the irradiation. If the electron beam was 5 kV and 20 kV, the diameter lasting increases and decreases, respectively. This effect can be explained by the change of the nanowires structure influenced by the electron beam.

Original languageEnglish
Title of host publicationASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems
Pages215-218
Number of pages4
DOIs
Publication statusPublished - Dec 1 2008
Event7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 - Smolenice, Slovakia
Duration: Oct 12 2008Oct 16 2008

Publication series

NameASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems

Other

Other7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008
CountrySlovakia
CitySmolenice
Period10/12/0810/16/08

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Nemcsics, Á., Horváth, E., Nagy, S., Molnár, L. M., Mojzes, I., & Horváth, Z. J. (2008). Some remarks to the nanowires grown on III-V substrate. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems (pp. 215-218). [4743320] (ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems). https://doi.org/10.1109/ASDAM.2008.4743320