Recent new results on defect structure of as‐implanted distributions explain difficulties in production of shallow junctions by ion implantation. Similarly, a demand on high dose rates, focused beams, or even ion pulses, promoted investigations on kinetic and thermal balance during microscopic processes. The paper is a short review on some of these problems, which result in further limitations in using ion implantation, but, also, brought better understanding of defect reactions.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics