Some Recently Emerged Problems of Ion Implantation. A. Review

Research output: Contribution to journalArticle

Abstract

Recent new results on defect structure of as‐implanted distributions explain difficulties in production of shallow junctions by ion implantation. Similarly, a demand on high dose rates, focused beams, or even ion pulses, promoted investigations on kinetic and thermal balance during microscopic processes. The paper is a short review on some of these problems, which result in further limitations in using ion implantation, but, also, brought better understanding of defect reactions.

Original languageEnglish
Pages (from-to)237-243
Number of pages7
Journalphysica status solidi (a)
Volume112
Issue number1
DOIs
Publication statusPublished - Mar 16 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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