Some new possibilities in non-destructive depth profiling using secondary emission spectroscopy

REELS and EPES

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A brief review is given of non-destructive depth profiling methods available in the literature. Two new terms are proposed for film thin analysis: the information depth zi and its resolution Δzi · zi is the thickness of the layer analysed by the method involved producing an integral signal. zi can be varied by scanning, e.g. the primary energy Ep or the angle of detection. Two new methods are discussed. (i) Elastic peak electron spectroscopy (EPES) which determines the elastic reflection probability. The elastic peak N(Ep' Z, θ) is affected by Ep; Z (atomic number) and θ (scattering angle) providing the depth profiling. (ii) Reflection electron energy loss spectroscopy (REELS) combined with EPES deals with core level ionization or plasmon loss spectra. The thickness d of an overlayer on a substrate can be estimated by the N(EL) ionization or N(Ep13) plasmon loss peaks vs Ep · zi is ∼ λ(E)/2; it is determined by the inelastic mean free path λ. Working with a conventional CMA in the Ep = 1-3 keV range zi = 2-4 nm and Δzi = 0.2 nm for 3 keV. Results are presented for the Al2O3|Al system.

Original languageEnglish
Pages (from-to)471-475
Number of pages5
JournalVacuum
Volume36
Issue number7-9
DOIs
Publication statusPublished - 1986

Fingerprint

Secondary emission
Electron spectroscopy
Depth profiling
Electron energy loss spectroscopy
Emission spectroscopy
secondary emission
Ionization
electron spectroscopy
energy dissipation
electron energy
Core levels
spectroscopy
Scattering
Scanning
ionization
Thin films
Substrates
mean free path
scanning
thin films

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

@article{5872a77f690e487482c440b536cb1386,
title = "Some new possibilities in non-destructive depth profiling using secondary emission spectroscopy: REELS and EPES",
abstract = "A brief review is given of non-destructive depth profiling methods available in the literature. Two new terms are proposed for film thin analysis: the information depth zi and its resolution Δzi · zi is the thickness of the layer analysed by the method involved producing an integral signal. zi can be varied by scanning, e.g. the primary energy Ep or the angle of detection. Two new methods are discussed. (i) Elastic peak electron spectroscopy (EPES) which determines the elastic reflection probability. The elastic peak N(Ep' Z, θ) is affected by Ep; Z (atomic number) and θ (scattering angle) providing the depth profiling. (ii) Reflection electron energy loss spectroscopy (REELS) combined with EPES deals with core level ionization or plasmon loss spectra. The thickness d of an overlayer on a substrate can be estimated by the N(EL) ionization or N(Ep13) plasmon loss peaks vs Ep · zi is ∼ λ(E)/2; it is determined by the inelastic mean free path λ. Working with a conventional CMA in the Ep = 1-3 keV range zi = 2-4 nm and Δzi = 0.2 nm for 3 keV. Results are presented for the Al2O3|Al system.",
author = "G. Gergely and M. Menyh{\'a}rd and A. Sulyok",
year = "1986",
doi = "10.1016/0042-207X(86)90230-7",
language = "English",
volume = "36",
pages = "471--475",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "7-9",

}

TY - JOUR

T1 - Some new possibilities in non-destructive depth profiling using secondary emission spectroscopy

T2 - REELS and EPES

AU - Gergely, G.

AU - Menyhárd, M.

AU - Sulyok, A.

PY - 1986

Y1 - 1986

N2 - A brief review is given of non-destructive depth profiling methods available in the literature. Two new terms are proposed for film thin analysis: the information depth zi and its resolution Δzi · zi is the thickness of the layer analysed by the method involved producing an integral signal. zi can be varied by scanning, e.g. the primary energy Ep or the angle of detection. Two new methods are discussed. (i) Elastic peak electron spectroscopy (EPES) which determines the elastic reflection probability. The elastic peak N(Ep' Z, θ) is affected by Ep; Z (atomic number) and θ (scattering angle) providing the depth profiling. (ii) Reflection electron energy loss spectroscopy (REELS) combined with EPES deals with core level ionization or plasmon loss spectra. The thickness d of an overlayer on a substrate can be estimated by the N(EL) ionization or N(Ep13) plasmon loss peaks vs Ep · zi is ∼ λ(E)/2; it is determined by the inelastic mean free path λ. Working with a conventional CMA in the Ep = 1-3 keV range zi = 2-4 nm and Δzi = 0.2 nm for 3 keV. Results are presented for the Al2O3|Al system.

AB - A brief review is given of non-destructive depth profiling methods available in the literature. Two new terms are proposed for film thin analysis: the information depth zi and its resolution Δzi · zi is the thickness of the layer analysed by the method involved producing an integral signal. zi can be varied by scanning, e.g. the primary energy Ep or the angle of detection. Two new methods are discussed. (i) Elastic peak electron spectroscopy (EPES) which determines the elastic reflection probability. The elastic peak N(Ep' Z, θ) is affected by Ep; Z (atomic number) and θ (scattering angle) providing the depth profiling. (ii) Reflection electron energy loss spectroscopy (REELS) combined with EPES deals with core level ionization or plasmon loss spectra. The thickness d of an overlayer on a substrate can be estimated by the N(EL) ionization or N(Ep13) plasmon loss peaks vs Ep · zi is ∼ λ(E)/2; it is determined by the inelastic mean free path λ. Working with a conventional CMA in the Ep = 1-3 keV range zi = 2-4 nm and Δzi = 0.2 nm for 3 keV. Results are presented for the Al2O3|Al system.

UR - http://www.scopus.com/inward/record.url?scp=0022094450&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022094450&partnerID=8YFLogxK

U2 - 10.1016/0042-207X(86)90230-7

DO - 10.1016/0042-207X(86)90230-7

M3 - Article

VL - 36

SP - 471

EP - 475

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 7-9

ER -