Since investigations and practice show that the homogeneity of the epitaxial layers of n-GaAs is limited in AsCl3-Ga-H2 VPE system under usual conditions, efforts were made to grow such layers at relatively low temperatures. The usual conditions mean temperatures of the deposition and also of the source zone related with the region of the diffusion limited growth circumstances. In this work, opposite to the usual conditions, temperatures in these zones corresponds to the kinetic region. Efforts in the low temperature epitaxial growth were made hoping that the uniformity of the layers would be improved, especially for microwave device purposes. So the influence of the growth parameters on the homogeneity was investigated. Different methods of the measurements were applied and not only the homogeneity, but the differences produced by the different methods were estimated. As a conclusion, a good homogeneity was obtained both in the thickness and the carrier concentration of the layers.
ASJC Scopus subject areas
- Physics and Astronomy(all)