Study of the trapping levels in SbSI crystals was carried out by the method of thermally stimulated currents under the photoelectret regime enabling separation of the effects resulting from photopolarization and spontaneous polarization. It is concluded that in investigations of local levels in a semiconducting ferroelectric allowance must be given not only for the effects associated with the spontaneous polarization but the actual nature of the local centers and the specific experimental conditions must also be considered.
|Number of pages||2|
|Journal||Sov Phys Semicond|
|Publication status||Published - Jan 1 1972|
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