SOME FEATURES OF TRAPPING LEVELS IN SbSI-TYPE SEMICONDUCTING FERROELECTRICS.

A. A. Kikineshi, D. G. Semak

Research output: Contribution to journalArticle

Abstract

Study of the trapping levels in SbSI crystals was carried out by the method of thermally stimulated currents under the photoelectret regime enabling separation of the effects resulting from photopolarization and spontaneous polarization. It is concluded that in investigations of local levels in a semiconducting ferroelectric allowance must be given not only for the effects associated with the spontaneous polarization but the actual nature of the local centers and the specific experimental conditions must also be considered.

Original languageEnglish
Pages (from-to)449-450
Number of pages2
JournalSov Phys Semicond
Volume6
Issue number3
Publication statusPublished - Jan 1 1972

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ASJC Scopus subject areas

  • Engineering(all)

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