SOME FEATURES OF TRAPPING LEVELS IN SbSI-TYPE SEMICONDUCTING FERROELECTRICS.

S. Kökényesi, D. G. Semak

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Study of the trapping levels in SbSI crystals was carried out by the method of thermally stimulated currents under the photoelectret regime enabling separation of the effects resulting from photopolarization and spontaneous polarization. It is concluded that in investigations of local levels in a semiconducting ferroelectric allowance must be given not only for the effects associated with the spontaneous polarization but the actual nature of the local centers and the specific experimental conditions must also be considered.

Original languageEnglish
Title of host publicationSov Phys Semicond
Pages449-450
Number of pages2
Volume6
Edition3
Publication statusPublished - Sep 1972

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Ferroelectric materials
Polarization
Crystals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kökényesi, S., & Semak, D. G. (1972). SOME FEATURES OF TRAPPING LEVELS IN SbSI-TYPE SEMICONDUCTING FERROELECTRICS. In Sov Phys Semicond (3 ed., Vol. 6, pp. 449-450)

SOME FEATURES OF TRAPPING LEVELS IN SbSI-TYPE SEMICONDUCTING FERROELECTRICS. / Kökényesi, S.; Semak, D. G.

Sov Phys Semicond. Vol. 6 3. ed. 1972. p. 449-450.

Research output: Chapter in Book/Report/Conference proceedingChapter

Kökényesi, S & Semak, DG 1972, SOME FEATURES OF TRAPPING LEVELS IN SbSI-TYPE SEMICONDUCTING FERROELECTRICS. in Sov Phys Semicond. 3 edn, vol. 6, pp. 449-450.
Kökényesi S, Semak DG. SOME FEATURES OF TRAPPING LEVELS IN SbSI-TYPE SEMICONDUCTING FERROELECTRICS. In Sov Phys Semicond. 3 ed. Vol. 6. 1972. p. 449-450
Kökényesi, S. ; Semak, D. G. / SOME FEATURES OF TRAPPING LEVELS IN SbSI-TYPE SEMICONDUCTING FERROELECTRICS. Sov Phys Semicond. Vol. 6 3. ed. 1972. pp. 449-450
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