Some electrical properties of zngep2 crystals

K. Somogyi, I. Bertóti

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Hall effect and thermoelectric power are measured on p-type ZnGeP2 single crystals. The ZnGeP2 crystals are grown from Bi melt using the solution growth technique. The typical hole concentration 1 x 1013 cm-3 and mobility 18 cm2/Vsec obtained from Hall measurements differ considerably from that (lx1016 cm-3 and 1 cm2 Vsec resp.) calculated from temperature slope of resistance by B. Ray, but are in good agreement with results of only Hall measurements reported earlier. An acceptor energy level of 0.35 eV is derived from the temperature dependence of the Hall constant. The donor and acceptor concentrations are calculated supposing the neutral impurity scattering to be dominant. An approximative value of the effective mass of holes mh…=(0.5± 0.1)mo is determined from the values of the thermoelectric power.

Original languageEnglish
Pages (from-to)103-106
Number of pages4
JournalJapanese Journal of Applied Physics
Volume11
Issue number1
DOIs
Publication statusPublished - 1972

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Thermoelectric power
Hall effect
Electric properties
electrical properties
Hole concentration
Crystals
Electron energy levels
crystals
rays
energy levels
Single crystals
Scattering
Impurities
slopes
impurities
Temperature
temperature dependence
single crystals
scattering
temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Some electrical properties of zngep2 crystals. / Somogyi, K.; Bertóti, I.

In: Japanese Journal of Applied Physics, Vol. 11, No. 1, 1972, p. 103-106.

Research output: Contribution to journalArticle

@article{85fd393f5cd547408f52cf5eb4b2c386,
title = "Some electrical properties of zngep2 crystals",
abstract = "Hall effect and thermoelectric power are measured on p-type ZnGeP2 single crystals. The ZnGeP2 crystals are grown from Bi melt using the solution growth technique. The typical hole concentration 1 x 1013 cm-3 and mobility 18 cm2/Vsec obtained from Hall measurements differ considerably from that (lx1016 cm-3 and 1 cm2 Vsec resp.) calculated from temperature slope of resistance by B. Ray, but are in good agreement with results of only Hall measurements reported earlier. An acceptor energy level of 0.35 eV is derived from the temperature dependence of the Hall constant. The donor and acceptor concentrations are calculated supposing the neutral impurity scattering to be dominant. An approximative value of the effective mass of holes mh…=(0.5± 0.1)mo is determined from the values of the thermoelectric power.",
author = "K. Somogyi and I. Bert{\'o}ti",
year = "1972",
doi = "10.1143/JJAP.11.103",
language = "English",
volume = "11",
pages = "103--106",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "1",

}

TY - JOUR

T1 - Some electrical properties of zngep2 crystals

AU - Somogyi, K.

AU - Bertóti, I.

PY - 1972

Y1 - 1972

N2 - Hall effect and thermoelectric power are measured on p-type ZnGeP2 single crystals. The ZnGeP2 crystals are grown from Bi melt using the solution growth technique. The typical hole concentration 1 x 1013 cm-3 and mobility 18 cm2/Vsec obtained from Hall measurements differ considerably from that (lx1016 cm-3 and 1 cm2 Vsec resp.) calculated from temperature slope of resistance by B. Ray, but are in good agreement with results of only Hall measurements reported earlier. An acceptor energy level of 0.35 eV is derived from the temperature dependence of the Hall constant. The donor and acceptor concentrations are calculated supposing the neutral impurity scattering to be dominant. An approximative value of the effective mass of holes mh…=(0.5± 0.1)mo is determined from the values of the thermoelectric power.

AB - Hall effect and thermoelectric power are measured on p-type ZnGeP2 single crystals. The ZnGeP2 crystals are grown from Bi melt using the solution growth technique. The typical hole concentration 1 x 1013 cm-3 and mobility 18 cm2/Vsec obtained from Hall measurements differ considerably from that (lx1016 cm-3 and 1 cm2 Vsec resp.) calculated from temperature slope of resistance by B. Ray, but are in good agreement with results of only Hall measurements reported earlier. An acceptor energy level of 0.35 eV is derived from the temperature dependence of the Hall constant. The donor and acceptor concentrations are calculated supposing the neutral impurity scattering to be dominant. An approximative value of the effective mass of holes mh…=(0.5± 0.1)mo is determined from the values of the thermoelectric power.

UR - http://www.scopus.com/inward/record.url?scp=84912988861&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912988861&partnerID=8YFLogxK

U2 - 10.1143/JJAP.11.103

DO - 10.1143/JJAP.11.103

M3 - Article

VL - 11

SP - 103

EP - 106

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1

ER -