Solid phase and ion beam epitaxial crystallization of Si implanted with Zn and Pb ions

Ch Angelov, S. Georgiev, B. Amov, V. Mikli, T. Lohner

Research output: Contribution to journalArticle

Abstract

Rutherford backscattering spectroscopy in combination with channelling have been applied to investigate the surface structural changes of silicon implanted with low-soluble species (Zn and Pb) and subsequently thermally and ion beam annealed. For the fast diffusing Zn complete recrystallization during annealing of layers amorphized by ion implantation was observed, while for the slow diffusing Pb incomplete recrystallization took place. The results are discussed with respect to the corresponding experimental conditions.

Original languageEnglish
Pages (from-to)311-314
Number of pages4
JournalJournal of Optoelectronics and Advanced Materials
Volume9
Issue number2
Publication statusPublished - Feb 1 2007

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Keywords

  • Impurity distribution
  • Ion implantation
  • Solid phase epitaxial crystallization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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