Sol-gel deposition of SnO2 on porous silicon layers investigated by RBS method

G. Craciun, O. Buiu, F. Paszti, C. Cobianu, C. Savaniu, E. Vasile

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

The pore walls of a columnar type porous silicon (PS) samples of different porosity were coated by SnO2 using sol-gel technique. The as-anodized PS samples were characterized by Scanning Electron Microscopy (SEM) and SnO2/PS and SnO2/Si samples were characterized by Rutheford Backscattering Spectrometry (RBS). The Sn signal in RBS spectra revealed that the pores are completely filled with a good homogeneity in depth. The influence of PS morphology on the tin oxide sol-gel deposition is discussed.

Original languageEnglish
Pages185-188
Number of pages4
Publication statusPublished - 1997
EventProceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2) - Sinaia, Romania
Duration: Oct 7 1997Oct 11 1997

Other

OtherProceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2)
CitySinaia, Romania
Period10/7/9710/11/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Craciun, G., Buiu, O., Paszti, F., Cobianu, C., Savaniu, C., & Vasile, E. (1997). Sol-gel deposition of SnO2 on porous silicon layers investigated by RBS method. 185-188. Paper presented at Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2), Sinaia, Romania, .