Small angle neutron scattering in P+-doped porous silicon

G. Kádár, E. Vázsonyi, S. Borbély, G. Káli

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

On the surface of single crystal silicon wafers, porous layers can be formed by electrochemical etching and their structural properties are determined by the doping type and concentration of the substrate. In p+-type doped, (1 0 0) oriented wafers the porous structure consists of `tube-like' voids and `column-like' remains of the silicon matrix, all perpendicular with respect to the wafer surface. In small angle neutron scattering experiments the micrometer long and nanometer diameter elongated scattering elements, i.e., tubes and columns can be well represented and approximated by cylindrical form factors. In an earlier experiment the diameter and scattering length distribution of the cylindrical scattering elements were measured in a p+-type (1 0 0) oriented porous silicon wafer and the tube diameters were seen to vary in the range from about 10 to 24 nm. In this paper the continuing small angle neutron scattering study of porous silicon layers will be presented. The evaluation conditions and method for the measured neutron intensity distributions will be discussed. The pore diameter distribution data calculated from the neutron scattering intensity curves are collected and compared in various samples of (1 0 0) oriented p+-doped wafers prepared with different porosity and different layer depth. The structural results and data obtained by small angle neutron scattering experiments may help in understanding the practically useful chemical, electronic and other properties of porous silicon.

Original languageEnglish
Pages (from-to)331-334
Number of pages4
JournalJournal of Porous Materials
Volume7
Issue number1
Publication statusPublished - 2000

Fingerprint

Porous silicon
Neutron scattering
porous silicon
neutron scattering
wafers
Scattering
Silicon wafers
tubes
Electrochemical etching
scattering
Experiments
Silicon
porosity
Structural properties
silicon
Neutrons
Porosity
chemical properties
Doping (additives)
Single crystals

ASJC Scopus subject areas

  • Chemistry (miscellaneous)
  • Physical and Theoretical Chemistry
  • Materials Science(all)
  • Catalysis

Cite this

Kádár, G., Vázsonyi, E., Borbély, S., & Káli, G. (2000). Small angle neutron scattering in P+-doped porous silicon. Journal of Porous Materials, 7(1), 331-334.

Small angle neutron scattering in P+-doped porous silicon. / Kádár, G.; Vázsonyi, E.; Borbély, S.; Káli, G.

In: Journal of Porous Materials, Vol. 7, No. 1, 2000, p. 331-334.

Research output: Contribution to journalArticle

Kádár, G, Vázsonyi, E, Borbély, S & Káli, G 2000, 'Small angle neutron scattering in P+-doped porous silicon', Journal of Porous Materials, vol. 7, no. 1, pp. 331-334.
Kádár, G. ; Vázsonyi, E. ; Borbély, S. ; Káli, G. / Small angle neutron scattering in P+-doped porous silicon. In: Journal of Porous Materials. 2000 ; Vol. 7, No. 1. pp. 331-334.
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